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Receivers for optical communications: A comparison of avalanche photodiodes with PIN-FET hybrids

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Abstract

The effects of photodiode bulk leakage current and amplifier noise on receiver sensitivity are analysed using a model described previously [4]. The sensitivity of a receiver using a PIN photodiode can be greatly improved by employing a high-performance microwave FET in the input stage, to the point where its remaining technical disadvantage in comparison with a silicon APD receiver at 800–900 nm may be offset by economic and operational attractions. In systems operating at the optimum transmission wavelength beyond 1.1 μm, the PIN-FET hybrid receiver may offer better technical performance than an APD receiver.

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  1. Post Office Research Centre, Martlesham Heath, Ipswich, UK

    D. R. Smith, R. C. Hooper & I. Garrett

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  1. D. R. Smith
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  2. R. C. Hooper
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  3. I. Garrett
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Smith, D.R., Hooper, R.C. & Garrett, I. Receivers for optical communications: A comparison of avalanche photodiodes with PIN-FET hybrids. Opt Quant Electron 10, 293–300 (1978). https://doi.org/10.1007/BF00620117

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