Abstract
Measurements of the reflectance and transmittance in the infrared part of the spectrum (400...4000cm−1) are carried out on oxidized Si wafers. Intrinsic dielectric properties of the oxide layers prepared by various methods are derived from experimental data. The dielectric functions of the oxides can be fitted by oscillator models. The related model parameters are compared with those of other SiO2 samples, as crystals and glasses. Optical arrangements to detect and characterize layers of thicknesses down to 3 nm are discussed. In particular, it is shown that experiments with polarized light at oblique incidence up to 80° are a powerful tool to characterize those layers.
Experiments are reported to determine, in addition, extrinsic properties such as B and P atoms in the oxide layer or defects due to an ion implantation treatment.
Conditions are discussed which should be applied to obtain the best quantitative analysis of the defect concentration.
This is a preview of subscription content, log in via an institution to check access.
Similar content being viewed by others
References
B. Harbecke, B. Heinz, P. Grosse: Appl. Phys. A38, 263–267 (1985)
B. Harbecke: Appl. Phys. B39, 165–170 (1986)
DA. Kleinman, W.G. Spitzer: Phys. Rev.125, 16 (1962)
K. Nakamoto:Infrared and Raman Spectra of Inorganic and Coordination Compounds (Wiley, New York 1977) p. 134
J. Nelson, S.M. Nelson: J. Chem. Soc. A172, 1592 (1969)
J. Brunn: Private communication
H. Shanks, C.J. Fany, L. Ley, M. Cardona, F.J. Demond, S. Kalbitzer: Phys. Stat. Solidi (b)100, 46 (1980)
M. Offenberg, M. Maier, R. Meyer, P. Balk: To be published
W.A. Pliskin: InSemiconductor Silicon, ed. by H.R. Huff and R.R. Burgers (The Electrochemical Society 1973) p. 509
J. Wong: J. Electron. Mat.5, 113 (1976)