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Growth kinetics of Si-molecular beam epitaxy

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Abstract

Growth mode, surface morphology, crystal perfection and growth rate of siliconmolecular beam epitaxy films were observed as function of temperature (450°–950°C), silicon flux density (8×1014−8×1015cm2/s) and surface orientation (111, 110, 100). Within the varied parameters growth proceeds by the two-dimensional growth mode via the lateral motion of atomic steps originating from the slight misorientation of commercially available substrates (typically 0.25°). Single crystalline films with high lattice perfection and smooth surfaces result from this growth mode. The growth rate — linearly dependent on Si-flux density and independant of temperature and orientation — indicates a condensation coefficient near unity. An atomic step flow model on the basis of the Burton-Cabrera-Frank theory explains this behaviour by mobile adatoms with low activation energy of diffusion.

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  1. AEG-Telefunken, Forschungsinstitut, D-7900, Ulm, Fed. Rep. Germany

    E. Kasper

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  1. E. Kasper
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Kasper, E. Growth kinetics of Si-molecular beam epitaxy. Appl. Phys. A 28, 129–135 (1982). https://doi.org/10.1007/BF00617144

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  • DOI: https://doi.org/10.1007/BF00617144

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