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Kinetics of CoSi2 from evaporated silicon

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Abstract

2 MeV4He+ backscattering spectrometry and CuK α x-ray diffraction were used to study CoSi2 formed by annealing at temperatures between 405° and 500 °C from CoSi with evaporated Si films. A laterally uniform layer of CoSi2 forms, in contrast to the laterally nonuniform CoSi2 layer that is obtained on single crystal Si substrates. The thickness of the CoSi2 film formed is proportional to the square root of time at a fixed temperature. The activation energy of this reaction is about 2.3 eV.

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Authors and Affiliations

  1. California Institute of Technology, 91125, Pasadena, CA, USA

    C. -D. Lien & M. -A. Nicolet

  2. University of California at San Diego, 92093, La Jolla, CA, USA

    S. S. Lau

Authors
  1. C. -D. Lien
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  2. M. -A. Nicolet
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  3. S. S. Lau
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Lien, C.D., Nicolet, M.A. & Lau, S.S. Kinetics of CoSi2 from evaporated silicon. Appl. Phys. A 34, 249–251 (1984). https://doi.org/10.1007/BF00616581

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