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Photoelectrochemical etching of compound semiconductors: Wavelength dependence

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Abstract

Argon-ion-laser photoetching was performed at various wavelengths, around the absorption edge of ZnSe and CdS. The surface etch pit density is observed to decrease with increasing penetration depth of the light. This observation is explained in terms of the recent theory of non-uniform charge flow within semiconductor junctions.

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Authors and Affiliations

  1. Department of Materials Research, The Weizmann Institute of Science, 76100, Rehovot, Israel

    R. Tenne & V. Marcu

  2. Department of Chemical Physics, The Weizmann Institute of Science, 76100, Rehovot, Israel

    Y. Prior

Authors
  1. R. Tenne
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  2. V. Marcu
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  3. Y. Prior
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Additional information

Incumbent of Helen and Milton A. Kitmmelman Career Development Chair in perpetuity, established by Helen and Milton A. Kimmelman, N.Y.

Formerly: Department of Plastics Research

Incumbent of Jacob and Alphonse Laniado (Montreal, Canada) Career Development Chair

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Tenne, R., Marcu, V. & Prior, Y. Photoelectrochemical etching of compound semiconductors: Wavelength dependence. Appl. Phys. A 37, 205–209 (1985). https://doi.org/10.1007/BF00614818

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  • DOI: https://doi.org/10.1007/BF00614818

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