Summary
In order to aim at production yields at economical levels in VLSI (verylargescaleintegration) technology a high degree of process maturity and stability has to be achieved. This requires a comprehensive characterization and control of the materials and processes used, and henceforth, the availability of appropriate analytical methods and tools. Thereby surface and thin film analytical tools play a key role and have to be applied from the very beginning of the development of a device technology. In the course of the full fabrication process a large number of thin films of inorganic (e.g., metals, insulators) and organic (e.g., photoresists) material is deposited, etched and completely or locally removed. The properties and quality of those thin films and the many surfaces and interfaces formed or occurring prior to and after the various processes such as film deposition, wet and dry etching, cleaning and the like have to be characterized and controlled. For the manifold surface analytical tasks nowadays a large number of techniques is available: Auger electron spectroscopy (AES), X-ray photoelectron spectroscopy (XPS), secondary ion mass spectrometry (SIMS), Rutherford backscattering (RBS), total reflexion X-ray fluorescence analysis (TRXFA), plasma chromatography mass spectrometry (PCMS). Here examples are discussed where those methods are applied to problems arising in the process development as well as failure analysis of advanced circuits, in particular a 4 M DRAM (megabitdynamicrandomaccessmemory). Finally, limitations of the available methods and future problems and demands are pointed out.
Similar content being viewed by others
References
Widmann D, Mader H, Friedrich H (1988) In: Heywang W, Müller R (eds) Technologie hochintegrierter Schaltungen. Halbleiter-Elektronik, vol 19. Springer, Berlin Heidelberg New York
Sunami H (1985) IEDM Technical Digest 694–697
Beinvogl W (1987) ITG-Fachberichte 98:5
Beinvogl W, Hopf E (1989) Festkörperprobleme 28 (in press)
Mühlhoff HM, Murkin P, Küsters KH, Orlowski M, Müller W (1987) Proc 1st Int Symp on Ultralarge Scale Integration Science and Technology, Electrochem Soc 87-11:632
Küsters KH, Mühlhoff HM, Enders G, Mohr EG, Müller W (1987) Proc 1st Int Symp on Ultralarge Scale Integration Science and Technology, Electrochem Soc 87-11:640
Kolbesen BO, Strunk H (1985) In: Huff HR, Einspruch NG (eds) VLSI-electronics: microstructure science, vol 12. Silicon materials. Academic Press, New York, p 143
Schwenke H, Knoth J (1982) Nucl Instrum Methods 193:239
Eichinger P, Rath HJ, Schwenke H (1988) In: Gupta DC (ed) Semiconductor fabrication: technology and metrology. ASTM STP990
Penka V, Hub W (1989) Spectrochimica Acta (in press)
Penka V, Hub W (1988) Paper presented at the 5. Arbeitstagung für Angewandte Oberflächenanalytik, Jülich
Carr TW (1984) Plasma chromatography. Plenum Press, New York
Briggs D, Riviere JC (1983) In: Briggs D, Seah MP (eds) Practical surface analysis by Auger and X-ray photoelectron spectroscopy. Wiley, Chichester, p 87
Mühlhoff L (1989) Paper presented at the 5. Arbeitstagung für Angewandte Oberflächenanalytik, Jülich. Fresenius Z Anal Chem 333:527–530
Nicolet MA (1978) Thin Solid Films 52:415
Cheung N, von Seefeld H, Nicolet MA (1980) Proc Electrochem Soc 80:323
Maeda T, Shima S, Nakayama T, Kakumu M, Mori K, Iwabuchi S, Aoki R, Matsunaga J (1985) IEDM, Digest of Technical Papers, p 257
Seah MP (1983) In: Briggs D, Seah MP (eds) Practical surface analysis by Auger and X-ray photoelectron spectroscopy. Wiley, Chichester, p 181
Sundgren JE, Johansson BO, Karlsson SE (1983) Thin Solid Films 105:353
Ahn KY, Wittmer M, Ting CY (1983) Thin Solid Films 107:45
Johansson BO, Sundgren JE, Greene JE, Rockett A, Bernett SA (1985) J Vac Sci Technol A3:303
Wittmer M (1982) J Appl Phys 53:1007
Oehrlein GS (1986) Phys Today 39:26
Flamm DL, Mucha JA (1987) In: Moss SJ, Ledwith A (eds) The chemistry of the semiconductor industry. Blackie, Glasgow, p 343
Ebel MF (1978) J Electron Spectrosc Relat Phenom 14:287
Segner J, Mohr EG (1985) Proc 3e Symposium Internationale sur la Gravure Seche et le Depot Plasma en Microelectronique, Cachan/Paris, p 85
Yates K, West RH (1983) Surf Interface Anal 5:217
Chaney RL (1987) Surf Interface Anal 10:36
Krizek J, Berresheim K, Panzner G, Hochkirchen J (1987) Fresenius Z Anal Chem 329:139
Hösler W (1989) Paper presented at the 5. Arbeitstagung für Angewandte Oberflächenanalytik, Jülich. Fresenius Z Anal Chem 333:315–317
Engelhardt M, Schwarzl S (1988) Proc Symp Dry Process, Electrochem Soc 88-7, p 48
Uchida H, Miyai Y, Inoue M (1988) Proc Symp Dry Process Electrochem Soc, 88-7:55
Magee CW, Amberiadis KG (1986) In: Benninghoven A, Colton RJ, Simons DS, Werner HW (eds) Secondary ion mass spectrometry SIMS V. Springer, Berlin Heidelberg New York, p 279
Tanigaki T, Kawado S, Nishiyama K (1984) In: Benninghoven A, Okano J, Shimizu R, Werner HW (eds) Secondary ion mass spectrometry SIMS IV. Springer, Berlin Heidelberg New York, p 305
Schaber H, von Criegern R, Weitzel I (1985) J Appl Phys 58:4036
Böhm HJ, Wendt H, Oppolzer H, Masseli K, Kassing R (1987) J Appl Phys 62:2784
Kakoschke R, Binder H, Röhl S, Masseli M, Rangelov IW, Saler S, Kassing R (1987) Nucl Instrum Methods Phys Res B21:142
von Criegern R, Zeininger H, Röhl S (1988) Proc 6th Int Conf Secondary Ion Mass Spectrometry, “SIMS VI”, Versailles, 1987. Wiley, New York, p 419
Haudek H (1988) Proc 13. Vortragsveranstaltung des Arbeitskreises Rastermikroskopie in der Materialprüfung. Deutscher Verband für Materialprüfung e.V. p 57
Horiguchi F, Nitayama A, Hieda K et al. (1987) Technical Digest of the International Electron Devices Meeting 1987 (IEDM-87), Washington, p 324
Beamson G, Porte HQ, Turner DW (1981) Nature 290:556
Gaarenstroom SW (1981) Appl Surface Sci 7:7; J Vac Sci Technol (1982) 20:458
Author information
Authors and Affiliations
Rights and permissions
About this article
Cite this article
Kolbesen, B.O., Pamler, W. Surface and thin film analysis in silicon technology: actual and future problems and demands. Z. Anal. Chem. 333, 561–568 (1989). https://doi.org/10.1007/BF00572377
Received:
Issue Date:
DOI: https://doi.org/10.1007/BF00572377