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Sputtered zinc sulphide films on silicon

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Abstract

The design of a triode rf sputtering system for the deposit of high purity films of zinc sulphide is outlined. It is shown that a variety of dopants may be incorporated in the film over wide concentration ranges by means of this technique, and it is also shown that rare earth cathodoluminescent films may be formed. When deposited under suitable conditions a moderate degree of crystallographic orientation of the films has been achieved.

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Authors and Affiliations

  1. Signals Research and Development Establishment, Christchurch, Hampshire, UK

    T. G. R. Rawlins & R. J. Woodward

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  1. T. G. R. Rawlins
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  2. R. J. Woodward
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Rawlins, T.G.R., Woodward, R.J. Sputtered zinc sulphide films on silicon. J Mater Sci 7, 257–264 (1972). https://doi.org/10.1007/BF00555626

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  • DOI: https://doi.org/10.1007/BF00555626

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