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Electrical transport properties of natural and synthetic graphite

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Abstract

Resistivity and magnetoresistance measurements were performed on a series of natural graphite crystals and highly oriented pyrolytic graphite (HOPG) samples as a function of temperature from 4.2 K to 293 K using a contactless r.f. technique. Resistance ratios of the natural graphite between 4.2 K and 293 K ranged from about 30 to 49. Carrier mobility of natural graphite was observed to obey at T−3/2 behaviour up to about 35 K. An anomalously high power dependence of μ versus T was observed below 35 K. A new model describing the dispersion of mobility of electrons and holes is presented which gives exact agreement with magnetoresistance results in the low field regime.

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Authors and Affiliations

  1. Moore School of Electrical Engineering and Laboratory for Research on the Structure of Matter, University of Pennsylvania, 19104, Philadelphia, Pennsylvania, USA

    L. A. Pendrys, C. Zeller & F. L. Vogel

Authors
  1. L. A. Pendrys
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  2. C. Zeller
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  3. F. L. Vogel
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Pendrys, L.A., Zeller, C. & Vogel, F.L. Electrical transport properties of natural and synthetic graphite. J Mater Sci 15, 2103–2112 (1980). https://doi.org/10.1007/BF00550638

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  • DOI: https://doi.org/10.1007/BF00550638

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