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Some electrical properties of amorphous thin films of mixed SiO and TiO

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Abstract

Electrical conduction in Cu-SiO/TiO-Cu thin film structures has been investigated. Prior to electroforming, the d.c. conduction showed a behaviour of the form log l c∞(Vb)1/2 where l c is the circulating current and V b is the applied voltage. At low applied voltages the a.c. conductivity obeyed the relation σAC∞f n (n=0.82 at 209 K). After electroforming, the samples showed voltage controlled negative resistance (VCNR), electron emission and voltage memory effects which can be explained in terms of a filamentary model.

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Authors and Affiliations

  1. Department of Physics, Brunel University, Uxbridge, Middlesex, UK

    M. Ilyas & C. A. Hogarth

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  1. M. Ilyas
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  2. C. A. Hogarth
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Ilyas, M., Hogarth, C.A. Some electrical properties of amorphous thin films of mixed SiO and TiO. J Mater Sci 18, 3377–3386 (1983). https://doi.org/10.1007/BF00544163

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  • DOI: https://doi.org/10.1007/BF00544163

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