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Effect of grain-boundary scattering on the electrical resistivity of indium films

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Abstract

Electrical resistivity and temperature coefficient of resistivity of polycrystalline indium films have been studied in the temperature range 30 to 90‡ C. It has been observed that the grain-boundary scattering theory of Mayadas and Shatzkes reproduces the experimental observations more faithfully than the size-effect theory given by Fuchs.

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Authors and Affiliations

  1. Department of General Physics and X-rays, Indian Association for the Cultivation of Science, 700032, Calcutta, India

    Arun K. Pal & S. Chaudhuri

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  1. Arun K. Pal
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  2. S. Chaudhuri
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Pal, A.K., Chaudhuri, S. Effect of grain-boundary scattering on the electrical resistivity of indium films. J Mater Sci 11, 872–876 (1976). https://doi.org/10.1007/BF00542304

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  • DOI: https://doi.org/10.1007/BF00542304

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