Abstract
Precipitates of a second phase in P-diffused (111) and (110) silicon wafers were revealed by X-ray topography and studied by transmission electron microscopy. The structural data derived from the analysis of the images and the corresponding diffraction patterns resulted in agreement with the ones recently reported by Wadsten, in his X-ray study on synthetic SiP single crystals. Therefore the precipitates were assigned a SiP base-centred orthorhombic structure with a=3.51 Å, b=20.59 Å and c=13.60 Å.
The sign of the calculated values of the misfit parameters between the two phases and the morphology of the precipitates were related to the tensile stress induced by the phosphorus diffusion into silicon.
This is a preview of subscription content, log in via an institution to check access.
Similar content being viewed by others
References
C. Ghezzi and M. Servidori, J. Mater. Sci. 9 (1974) 1797.
P. Negrini, D. Nobili and S. Solmi, to be published.
P. F. Schmidt and R. Stickler, J. Electrochem. Soc. 111 (1964) 1188.
C. G. Beck and R. Stickler, J. Appl. Phys. 37 (1966) 4683.
E. Levine, J. Washburn and G. Thomas, J. Appl. Phys. 38 (1967) 87.
V. M. Glazov and V. S. Zemskov, “Physico-Chemical Principles of Semiconductor Doping” (JPST Press, Cap. No 2205, Jerusalem 1968) p. 141.
P. G. Merli and U. Valdré, J. Phys. E: Sci. Instrum. 5 (1972) 933.
T. Wadsten, Univ. Stockholm Chem. Communie. No 7, (1973) 1.
G. H. Schwuttke and J. K. Howard, J. Appl. Phys. 39 (1968) 1581.
S. Prussin, J. Appl. Phys. 32 (1961) 1876.
Author information
Authors and Affiliations
Rights and permissions
About this article
Cite this article
Servidori, M., Armigliato, A. Electron microscopy of silicon monophosphide precipitates in P-diffused silicon. J Mater Sci 10, 306–313 (1975). https://doi.org/10.1007/BF00540355
Received:
Accepted:
Issue Date:
DOI: https://doi.org/10.1007/BF00540355