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Modelling of wafer heating during rapid thermal processing

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Abstract

A theory of wafer heating during rapid thermal processing is presented. It is demonstrated that temperature uniformity is not only limited by radiation loss at the wafer edge in the stationary state but also influenced by transient effects during temperature ramping. Whereas a compensation of edge losses call for enhanced illumination intensities at the wafer periphery, the avoidance of transient temperature gradients would require uniform illumination. Calculations for various system configurations lead to optimized processing cycles and suggest possible improvements of RTP equipment.

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Authors and Affiliations

  1. Siemens AG, HL T 31, Otto-Hahn-Ring 6, D-8000, München 83, Germany

    R. Kakoschke, E. Bußmann & H. Föll

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  1. R. Kakoschke
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  2. E. Bußmann
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  3. H. Föll
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Kakoschke, R., Bußmann, E. & Föll, H. Modelling of wafer heating during rapid thermal processing. Appl. Phys. A 50, 141–150 (1990). https://doi.org/10.1007/BF00343409

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  • DOI: https://doi.org/10.1007/BF00343409

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