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Synthesis of n-type semiconducting diamond film using diphosphorus pentaoxide as the doping source

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Abstract

An n-type semiconducting diamond film has been synthesized by the hot filament CVD method using diphosphorus pentaoxide as the doping source. The obtained film was identified as polycrystalline diamond containing few sp2 components by means of several methods including Raman spectroscopy. From measurements of the Hall effect and the Seebeck effect, the film was found to be an n-type semiconductor.

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Authors and Affiliations

  1. Department of Electronics, School of Engineering, Tokai University, 1117 Kitakaname, Hiratsuka, Kanagawa, 259-12, Japan

    Ken Okano, Hideo Kiyota, Tatsuya Iwasaki, Yoshitaka Nakamura, Yukio Akiba, Tateki Kurosu, Masamori Iida & Terutaro Nakamura

Authors
  1. Ken Okano
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  2. Hideo Kiyota
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  3. Tatsuya Iwasaki
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  4. Yoshitaka Nakamura
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  5. Yukio Akiba
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  6. Tateki Kurosu
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  7. Masamori Iida
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  8. Terutaro Nakamura
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Additional information

Patent pending No. Heisei 1-302209

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Okano, K., Kiyota, H., Iwasaki, T. et al. Synthesis of n-type semiconducting diamond film using diphosphorus pentaoxide as the doping source. Appl. Phys. A 51, 344–346 (1990). https://doi.org/10.1007/BF00324317

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  • DOI: https://doi.org/10.1007/BF00324317

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