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Platinum-silicide formation during rapid thermal annealing: Dependence on substrate orientation and pre-implanted impurities

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Abstract

The kinetics of Pt-silicide formation during rapid thermal annealing has been studied as a function of silicon-substrate orientation ((111), (011), and (001)) and type of pre-implanted impurity in the silicon substrate (As, Kr, and Ge). Rutherford backscattering spectrometry, transmission electron microscopy, and four-point probe resistivity measurements were used for this investigation. In the case of Pt2Si growth, both an orientation and impurity dependence was observed; the PtSi growth, however, was found to be independent of these parameters except in the case of As pre-implantation for which a retardation was found.

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Author notes

  1. P. I. Gaiduk

    Present address: Institute of Applied Physics, The Belorussian State University, Minsk, USSR

Authors and Affiliations

  1. Institute of Physics, University of Aarhus, DK-8000, Aarhus C, Denmark

    P. I. Gaiduk & A. Nylandsted Larsen

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  1. P. I. Gaiduk
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  2. A. Nylandsted Larsen
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Gaiduk, P.I., Nylandsted Larsen, A. Platinum-silicide formation during rapid thermal annealing: Dependence on substrate orientation and pre-implanted impurities. Appl. Phys. A 53, 168–171 (1991). https://doi.org/10.1007/BF00323878

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  • DOI: https://doi.org/10.1007/BF00323878

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