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Investigation of the Effect of Barrier Layer Engineering on DC and RF Performance of Gate-Recessed AlGaN/GaN HEMT

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Methodologies and Application Issues of Contemporary Computing Framework

Abstract

E-mode AlGaN/GaN high electron mobility transistors have been investigated over its DC and RF performance. The effect of adding an additional barrier layer of AlxGa1−xN with a different mole fraction of Al in the two layers has been reported. Simulation results indicate an enhancement in the peak transconductance as well as in the ft and fmax values as compared to the single-barrier layer E-mode HEMT, thereby indicating an improvement in the DC and RF characteristics resulting from the barrier layer engineering of the device.

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Authors and Affiliations

  1. ECE Department, Kalyani Government Engineering College, Kalyani, India

    Shubham Mondal, Sritoma Paul & Angsuman Sarkar

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  1. Shubham Mondal
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  2. Sritoma Paul
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  3. Angsuman Sarkar
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Correspondence to Angsuman Sarkar .

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Editors and Affiliations

  1. Department of Computer Science and Engineering, University of Kalyani, Kalyani, West Bengal, India

    Jyotsna Kumar Mandal

  2. Department of Computer Science and Engineering, Assam University, Silchar, Assam, India

    Somnath Mukhopadhyay

  3. Department of Computer and System Sciences, Visva-Bharati University, Santiniketan, West Bengal, India

    Paramartha Dutta

  4. Department of Computer Science and Engineering, Kalyani Government Engineering College, Kalyani, West Bengal, India

    Kousik Dasgupta

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Mondal, S., Paul, S., Sarkar, A. (2018). Investigation of the Effect of Barrier Layer Engineering on DC and RF Performance of Gate-Recessed AlGaN/GaN HEMT. In: Mandal, J., Mukhopadhyay, S., Dutta, P., Dasgupta, K. (eds) Methodologies and Application Issues of Contemporary Computing Framework. Springer, Singapore. https://doi.org/10.1007/978-981-13-2345-4_14

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  • DOI: https://doi.org/10.1007/978-981-13-2345-4_14

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  • Publisher Name: Springer, Singapore

  • Print ISBN: 978-981-13-2344-7

  • Online ISBN: 978-981-13-2345-4

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