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ELTRAN® (SOI-Epi Wafer™) Technology

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Progress in SOI Structures and Devices Operating at Extreme Conditions

Part of the book series: NATO Science Series ((NAII,volume 58))

Abstract

ELTRAN® (Epitaxial Layer TRANsfer), which is the first manufacturable and commercially available product using Porous Si, has been originated, developed and produced in Canon Inc., Japan. The last established technique is highly reproducible splitting in the Porous Si layer by Water Jet and reuse the seed wafer several times. The thicknesses of both SOI and the buried oxide layers are precisely controlled in the very wide range from the extremely thin as 27 nm to as thick as a few μm with the thickness uniformity less than +/- 5 %. The active layer has no COP (Crystal Originated Particle or Pits) by epitaxial growth. The buried oxide is thermally grown on epitaxial Si layers and has no pinholes. We have successfully expanded the wafers to 300-mm (12-inch) diameter, in which SOI-thickness-uniformity of ±1.1% was even better than 8 inch

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Author information

Authors and Affiliations

  1. ELTRAN Business Center, Canon Inc., 6770 Tamura, Hiratsuka, Kanagawa, 254-0013, Japan

    Takao Yonehara & Kifofumi Sakaguchi

Authors
  1. Takao Yonehara
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  2. Kifofumi Sakaguchi
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Editor information

Editors and Affiliations

  1. Institut de Microélectronique, Electromagnétisme et Photonique, INPG-CNRS, Grenoble, France

    F. Balestra

  2. Institute of Semiconductor Physics, National Academy of Sciences, Kyiv, Ukraine

    A. Nazarov  & V. S. Lysenko  & 

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© 2002 Springer Science+Business Media Dordrecht

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Yonehara, T., Sakaguchi, K. (2002). ELTRAN® (SOI-Epi Wafer™) Technology. In: Balestra, F., Nazarov, A., Lysenko, V.S. (eds) Progress in SOI Structures and Devices Operating at Extreme Conditions. NATO Science Series, vol 58. Springer, Dordrecht. https://doi.org/10.1007/978-94-010-0339-1_5

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  • DOI: https://doi.org/10.1007/978-94-010-0339-1_5

  • Publisher Name: Springer, Dordrecht

  • Print ISBN: 978-1-4020-0576-3

  • Online ISBN: 978-94-010-0339-1

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