Abstract
The large amount of work done recently on laser annealing of ion-implanted silicon has raised some fundamental questions about transitions between various phases of silicon : ion-implanted layers (which are amorphous), crystal and liquid. Most authors believe that during laser annealing the surface layer melts and recrystallizes in times of order of hundreds of nanoseconds, i.e. short enough to avoid diffusion of dopants.
This is a preview of subscription content, log in via an institution to check access.
Access this chapter
Tax calculation will be finalised at checkout
Purchases are for personal use only
Preview
Unable to display preview. Download preview PDF.
References
Auston, D.M., Surko, D.M., Venkatesan, T.N.C., Slusher, R.E., Golovchenko, J.A., Appl. Phys. Lett. 35 (1978) 437.
Tseng, W.F., Mayer, J.W., Campisano, S.U., Foti, G., Rimini, E., Appl. Phys. Lett. 32 (1978) 824.
Liu, P.L., Yen, R., Bloembergen, N., Hodgson, R.T., Appl. Phys. Lett. 34 (1979) 864.
Lo, H.W. and Compaan, A., Phys. Rev. Lett. 44 (1980) 6604; Aydinli, A., Lo, H.W., Lee, M.C., Compaan, A., Phys. Rev. Lett. 46 (1981) 1640.
Bentini, G.G., Cohen, C., Desalvo, A., Drigo, A.V., Phys. Rev. Lett. 46 (1981) 156.
Van Vechten, J.A., Tsu, R., Saris, F.W. and Hoohout, D., Phys. Lett. 74A (1979) 417 and 422.
Bok, J., Phys. Lett. 84A (1981) 308.
Combescot, M., Phys. Lett. 85A (1981) 308.
Combescot, M., Bok, J., Phys. Rev. Lett. 48 (1982) 1413.
Godefroy, L.R., Aigrain, P., Proc. Int. Conf. on the Physics of Semiconductors, Exter, 1962, Institute of Physics, London, 1962.
Heine, V., Van Vechten, J.A., Phys. Rev. B13 (1976) 1622.
Bagly, B.G., Chen, H.S., Laser Solid Interaction and Laser Processing (1978), p. 73.
Baeri, P., Foti, G., Poate, J.M., Cullis, A.G., Phys. Rev. Lett. 45 (1980) 2039; Kokorowki, S.A., Olson, G.L., Roth, J.A., Hess, L.D., Phys. Rev. Lett. 48 (1982) 498.
Koster, U., Phys. Stat. Sol. 48 (1978) 313.
Zellama, K., Germain, P., Squelard, S., Bourgoin, J.C., Thomas, P.A., J. Appl. Physics 50 (1979) 6995.
Kokorowski, S.A., Olson, G.L., Hess, L.D., J. Appl. Physics 53 (1982) 921.
For a nice review of crystallization processes in Germanium, see Barna, A., Barna, P., Bede, Z., Poeza, J.S., Pezsgai, I., Radnoczi, J., Thin Solid Film 3 (1974) 49 and Journal of non Crystalline Solid 8–10 (1974) 36.
Magarino, J., Kaplan, D. (private communication).
Blum, N.A., Feldmann, C., J. non cryst. Solids 11 (1972) 242.
All these estimates have been made using the steady-state nucleation current which is reached after a timelag τL; τL has been measured in silicon by Koster [ 7] between 550° and 650°. Using an Arrhenius law, we find τL ~ 10−5 s at Tm, which is of order the nucleation times calculated using the steady-state nucleation current. This may produce an increase, by a factor of the order of 2, of this estimated nucleation time.
More details on the resolution of the heat equation in cases relevant with laser heating of silicon will be published elsewhere.
Author information
Authors and Affiliations
Editor information
Editors and Affiliations
Rights and permissions
Copyright information
© 1983 Martinus Nijhoff Publishers, The Hague
About this chapter
Cite this chapter
Combescot, M., Bok, J. (1983). Crystalline, Amorphous and Liquid Silicon. In: Laude, L.D. (eds) Cohesive Properties of Semiconductors under Laser Irradiation. NATO ASI Series, vol 69. Springer, Dordrecht. https://doi.org/10.1007/978-94-009-6890-5_11
Download citation
DOI: https://doi.org/10.1007/978-94-009-6890-5_11
Publisher Name: Springer, Dordrecht
Print ISBN: 978-94-009-6892-9
Online ISBN: 978-94-009-6890-5
eBook Packages: Springer Book Archive