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Fielday — Finite Element Device Analysis

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Process and Device Simulation for MOS-VLSI Circuits

Part of the book series: NATO ASI Series ((NSSE,volume 62))

Abstract

Two- and three-dimensional mobile carrier transport in a semiconductor is simulated in the FIELDAY program using the finite element method. A wide variety of physical effects important in bipolar and field effect transistors can be modeled. The finite element method transforms the continuum description of mobile carrier transport in a semiconductor device to a simulation model at a discrete number of points. Coupled and decoupled algorithms offer two methods of linearizing the differential equations. Direct techniques are used to solve the resulting matrix equations. Pre- and post-processors enable users to rapidly generate new models and analyze results. Specific examples illustrate the flexibility and accuracy of FIELDAY. Projections of future advancements in the program are discussed.

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Footnotes

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Author information

Authors and Affiliations

  1. Federal Systems Division, International Business Machines, Manassas, Virginia, USA

    K. A. Salsburg

  2. General Technology Division, International Business Machines, Essex Junction, Vermont, USA

    P. E. Cottrell & E. M. Buturla

Authors
  1. K. A. Salsburg
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  2. P. E. Cottrell
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  3. E. M. Buturla
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Editor information

Editors and Affiliations

  1. University of Genova, Genova, Italy

    Paolo Antognetti

  2. Massachusetts Institute of Technology, Cambridge, MA, USA

    Dimitri A. Antoniadis

  3. Stanford University, Stanford, CA, USA

    Robert W. Dutton

  4. University of California, Berkeley, CA, USA

    William G. Oldham

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© 1983 Martinus Nijhoff Publishers, The Hague

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Salsburg, K.A., Cottrell, P.E., Buturla, E.M. (1983). Fielday — Finite Element Device Analysis. In: Antognetti, P., Antoniadis, D.A., Dutton, R.W., Oldham, W.G. (eds) Process and Device Simulation for MOS-VLSI Circuits. NATO ASI Series, vol 62. Springer, Dordrecht. https://doi.org/10.1007/978-94-009-6842-4_14

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  • DOI: https://doi.org/10.1007/978-94-009-6842-4_14

  • Publisher Name: Springer, Dordrecht

  • Print ISBN: 978-94-009-6844-8

  • Online ISBN: 978-94-009-6842-4

  • eBook Packages: Springer Book Archive

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