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Part of the book series: NATO ASI Series ((NSSE,volume 87))

Abstract

Surface kinetic data relating to the growth of thin films of III-V compounds and alloys by MBE can be obtained using modulated beam techniques. Data acquisition and signal processing methods are described, and application to the study of Ga-As4 and Ga-As2 surface reactions presented in detail. The evaluation of composition control during growth of both mixed Group III and mixed Group V element alloys is also discussed.

Some consequences on film properties of the differing surface chemistry involved in growth from Group V element tetramers compared with dimers are considered in relation to possible reaction mechaniums. The evaluation of the surface crystallographic and electronic structure of differently reconstructed GaAs(00l) surfaces using RHEED, ARPES and core level spectroscopy is briefly reviewed.

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© 1985 Martinus Nijhoff Publishers, Dordrecht

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Joyce, B.A. (1985). Kinetic and Surface Aspects of MBE. In: Chang, L.L., Ploog, K. (eds) Molecular Beam Epitaxy and Heterostructures. NATO ASI Series, vol 87. Springer, Dordrecht. https://doi.org/10.1007/978-94-009-5073-3_2

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  • DOI: https://doi.org/10.1007/978-94-009-5073-3_2

  • Publisher Name: Springer, Dordrecht

  • Print ISBN: 978-94-010-8744-5

  • Online ISBN: 978-94-009-5073-3

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