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Metal Organic Chemical Vapor Deposition

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Molecular Beam Epitaxy and Heterostructures

Part of the book series: NATO ASI Series ((NSSE,volume 87))

Abstract

In this paper it is shown that the low pressure organometallic chemical vapor deposition (LP-MOCVD) technique of growing semiconductors is generally applicable to most of the III-V compounds that are currently of interest. The principles of the technique and five selected specific applications are detailed: 1) GaAlAs/GaAs quantum well lasers; 2) GaAlAs/GaAs modulation doped structures; 3) Two dimensional electron gas layer at GalnAs/InP interfaces; 4) Low threshold-current density lasers operating at 1.3µ,m; 5) Multiquantum well GalnAs/InP heterostructures.

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Authors and Affiliations

  1. Thomson — CSF, Orsay, France

    J. P. Duchemin, S. Hersee, M. Razeghi & M. A. Poisson

Authors
  1. J. P. Duchemin
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  2. S. Hersee
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  3. M. Razeghi
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  4. M. A. Poisson
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Editor information

Editors and Affiliations

  1. IBM T.J. Watson Research Center, Yorktown Heights, 10598, NY, USA

    Leroy L. Chang

  2. Max-Planck-lnstitute, D-7000, Stuttgart 80, Germany

    Klaus Ploog

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© 1985 Martinus Nijhoff Publishers, Dordrecht

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Duchemin, J.P., Hersee, S., Razeghi, M., Poisson, M.A. (1985). Metal Organic Chemical Vapor Deposition. In: Chang, L.L., Ploog, K. (eds) Molecular Beam Epitaxy and Heterostructures. NATO ASI Series, vol 87. Springer, Dordrecht. https://doi.org/10.1007/978-94-009-5073-3_18

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  • DOI: https://doi.org/10.1007/978-94-009-5073-3_18

  • Publisher Name: Springer, Dordrecht

  • Print ISBN: 978-94-010-8744-5

  • Online ISBN: 978-94-009-5073-3

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