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Optical and Electronic Properties of SiC

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The Physics and Chemistry of Carbides, Nitrides and Borides

Part of the book series: NATO ASI Series ((NSSE,volume 185))

Abstract

This lecture is intended to be a short survey which highlights those aspects of the optical and electronic properties of SiC which are currently being studied on single crystal epitaxial films of SiC grown on Si or SiC. We touch on the following topics: optical constants, lattice bands, electronic band structure, low temperature photoluminescence, transport phenomena, defect states and wave-vector classification of SiC physical properties.

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Authors and Affiliations

  1. Dept. of Physics, University of Pittsburgh, Pittsburgh, PA, 15260, USA

    W. J. Choyke

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  1. W. J. Choyke
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Editors and Affiliations

  1. Materials Science Centre, University of Manchester/UMIST, Grosvenor Street, Manchester, MI 7HS, UK

    Robert Freer

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© 1990 Kluwer Academic Publishers

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Choyke, W.J. (1990). Optical and Electronic Properties of SiC. In: Freer, R. (eds) The Physics and Chemistry of Carbides, Nitrides and Borides. NATO ASI Series, vol 185. Springer, Dordrecht. https://doi.org/10.1007/978-94-009-2101-6_33

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  • DOI: https://doi.org/10.1007/978-94-009-2101-6_33

  • Publisher Name: Springer, Dordrecht

  • Print ISBN: 978-94-010-7444-5

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