Abstract
Modeling of memristor devices is essential for memristor based circuit and system design. This chapter presents a review of existing memristor modeling techniques and provides simulations that compare several existing models to published memristor characterization data. A discussion of existing models is presented that explains how the equations of each relate to physical device behaviors.
The simulations were completed in LTspice and compare the output of the different models to current–voltage relationships of physical devices. Sinusoidal and triangular pulse inputs were used throughout the simulations to test the capabilities of each model. The chapter is concluded by recommending a more generalized memristor model that can be accurately matched to several different published device characterizations. This generalized model provides the potential for more accurate circuit simulation for a wide range of device structures and voltage inputs.
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Yakopcic, C., Taha, T.M., Subramanyam, G., Pino, R.E. (2012). Memristor SPICE Modeling. In: Kozma, R., Pino, R., Pazienza, G. (eds) Advances in Neuromorphic Memristor Science and Applications. Springer Series in Cognitive and Neural Systems, vol 4. Springer, Dordrecht. https://doi.org/10.1007/978-94-007-4491-2_12
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DOI: https://doi.org/10.1007/978-94-007-4491-2_12
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