Abstract
Materials with low dielectric constant are required as interlayer dielectrics for on-chip interconnect of ULSI (ultra large scale integration) devices to provide high speed, low dynamic power dissipation and low cross-talk noise. Selecting chemical compounds with low polarizability and introducing porosity achieve reduction of dielectric constant. However, integration of such materials into micro- and nanoelectronic circuits poses a number of challenges, as the materials must meet strict requirements in terms of properties and reliability. This paper is an overview of porous low dielectric constant (low-k) dielectrics developed for micro- and nanoelectronic applications. Classification of low-k films including different approaches used for their deposition, characterization of porosity, mechanical and chemical properties, new characterization methods is also discussed.
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Baklanov, M.R. (2012). Nanoporous Dielectric Materials for Advanced Micro- and Nanoelectronics. In: Shunin, Y., Kiv, A. (eds) Nanodevices and Nanomaterials for Ecological Security. NATO Science for Peace and Security Series B: Physics and Biophysics. Springer, Dordrecht. https://doi.org/10.1007/978-94-007-4119-5_1
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DOI: https://doi.org/10.1007/978-94-007-4119-5_1
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