Abstract
A new method for simulation of etching and deposition processes has been developed. This method is based on a cellular material representation and on morphological filter operations for surface movement. In this paper we describe theory and application of our approach. Simulation results both in two and three dimensions demonstrate the simulation capabilities of this new method.
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© 1993 Springer-Verlag Wien
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Strasser, E., Selberherr, S. (1993). A General Simulation Method for Etching and Deposition Processes. In: Selberherr, S., Stippel, H., Strasser, E. (eds) Simulation of Semiconductor Devices and Processes. Springer, Vienna. https://doi.org/10.1007/978-3-7091-6657-4_88
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DOI: https://doi.org/10.1007/978-3-7091-6657-4_88
Publisher Name: Springer, Vienna
Print ISBN: 978-3-7091-7372-5
Online ISBN: 978-3-7091-6657-4
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