Skip to main content
SpringerLink
Log in

Initial Conditions for Transient Enhanced Diffusion: Beyond the Plus-Factor Approach

  • Conference paper
Simulation of Semiconductor Processes and Devices 2001

Abstract

A new model is proposed for interstitial and vacancy profiles due to ion implantation. When used in TED simulations, more accurate results are obtained than with the “plus-factor” model. The user is not required to run Monte Carlo simulations nor to explicitly take spatial correlations between interstitials and vacancies into account. The model is formulated in terms of effective Frenkel pair numbers and vertical and lateral shift distances between interstitial and vacancy profiles. It is well suited for 1D/2D/3D process simulation.

This is a preview of subscription content, log in via an institution to check access.

Access this chapter

Log in via an institution
Chapter
USD 29.95
Price excludes VAT (USA)
  • Available as PDF
  • Read on any device
  • Instant download
  • Own it forever
eBook
USD 169.00
Price excludes VAT (USA)
  • Available as PDF
  • Read on any device
  • Instant download
  • Own it forever
Softcover Book
USD 219.99
Price excludes VAT (USA)
  • Compact, lightweight edition
  • Dispatched in 3 to 5 business days
  • Free shipping worldwide - see info
Hardcover Book
USD 219.99
Price excludes VAT (USA)
  • Durable hardcover edition
  • Dispatched in 3 to 5 business days
  • Free shipping worldwide - see info

Tax calculation will be finalised at checkout

Purchases are for personal use only

Institutional subscriptions

Preview

Unable to display preview. Download preview PDF.

Unable to display preview. Download preview PDF.

References

  1. G. Hobler, L. Pelaz, and C. S. Rafferty, J. Electrochem. Soc. 147(9), 3494–3501, 2000.

    Article  Google Scholar 

  2. M. D. Giles, J Electrochem. Soc. 138(4), 1160–1165, 1991.

    Article  Google Scholar 

  3. G. Hobler and V. Moroz, In ESSDERC 2000 pp. 168–171. Frontier Group, 2000.

    Google Scholar 

  4. L. Pelaz, G. H. Gilmer, H.-J. Gossmann, C. S. Rafferty, M. Jaraiz, and J. Barbolla,Appl. Phys. Lett. 74(24), 3657–3659, 1999.

    Article  Google Scholar 

  5. G. Hobler, L. Pelaz, and C. S. Rafferty, Nucl. Instr. Meth. B 153, 172–176, 1999.

    Article  Google Scholar 

  6. G. Hobler and S. Selberherr, IEEE Trans. Comp.-Aided Des. 7(2), 174–180, 1988.

    Article  Google Scholar 

  7. R. Kalyanaraman, T. E. Haynes, D. C. Jacobson, H.-J. Gossmann, and C. S. Rafferty, In Mat. Res. Soc. Symp. Proc. vol. 610, B9.4. MRS, Warrendale, 2000.

    Google Scholar 

  8. L. Laanab, C. Bergaud, M. M. Faye, J. Faure, A. Martinez, and A. Claverie, In Mat. Res. Soc. Symp. Proc. vol. 279, pp. 381–386. MRS, Pittsburgh, 1993.

    Google Scholar 

Download references

Author information

Authors and Affiliations

  1. Univ.of Technology Vienna, Vienna, Austria, A-1040

    G. Hobler

  2. Avant! Corporation, Fremont, CA 94538, Leuven, UAS

    V. Moroz

Authors
  1. G. Hobler
    View author publications

    You can also search for this author in PubMed Google Scholar

  2. V. Moroz
    View author publications

    You can also search for this author in PubMed Google Scholar

Editor information

Editors and Affiliations

  1. “Demokritos” National Center for Scientific Research, Institute of Microelectronics, Athens, Greece

    Dimitris Tsoukalas  & Christos Tsamis  & 

Rights and permissions

Reprints and permissions

Copyright information

© 2001 Springer-Verlag Wien

About this paper

Cite this paper

Hobler, G., Moroz, V. (2001). Initial Conditions for Transient Enhanced Diffusion: Beyond the Plus-Factor Approach. In: Tsoukalas, D., Tsamis, C. (eds) Simulation of Semiconductor Processes and Devices 2001. Springer, Vienna. https://doi.org/10.1007/978-3-7091-6244-6_7

Download citation

  • DOI: https://doi.org/10.1007/978-3-7091-6244-6_7

  • Publisher Name: Springer, Vienna

  • Print ISBN: 978-3-7091-7278-0

  • Online ISBN: 978-3-7091-6244-6

  • eBook Packages: Springer Book Archive

Publish with us

Policies and ethics

Search

Navigation