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Picosecond time-resolved X-ray diffraction from a silicon crystal under laser-induced breakdown

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Ultrafast Phenomena XII

Part of the book series: Springer Series in Chemical Physics ((CHEMICAL,volume 66))

Abstract

Picosecond time-resolved X-ray diffraction is performed for a Si(111) under laserinduced breakdown using picosecond pulsed X-rays. Transient change in strain profiles due to the shock compression generated by laser-induced breakdown is observed. The propagating strain profiles inside the Si(111) are determined.

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References

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Authors and Affiliations

  1. Materials and Structures Laboratory, Tokyo Institute of Technology, 4259 Nagatsuta, Midori-ku, Yokohama, 226-8503, Japan

    Kazutaka G. Nakamura, Yoichiro Hironaka, Akio Yazaki, Fumikazu Saito & Ken-ichi Kondo

Authors
  1. Kazutaka G. Nakamura
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  2. Yoichiro Hironaka
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  3. Akio Yazaki
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  4. Fumikazu Saito
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  5. Ken-ichi Kondo
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© 2001 Springer-Verlag Berlin Heidelberg

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Nakamura, K.G., Hironaka, Y., Yazaki, A., Saito, F., Kondo, Ki. (2001). Picosecond time-resolved X-ray diffraction from a silicon crystal under laser-induced breakdown. In: Ultrafast Phenomena XII. Springer Series in Chemical Physics, vol 66. Springer, Berlin, Heidelberg. https://doi.org/10.1007/978-3-642-56546-5_82

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  • DOI: https://doi.org/10.1007/978-3-642-56546-5_82

  • Publisher Name: Springer, Berlin, Heidelberg

  • Print ISBN: 978-3-642-62512-1

  • Online ISBN: 978-3-642-56546-5

  • eBook Packages: Springer Book Archive

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