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Optical Detectors

  • Chapter
Springer Handbook of Lasers and Optics

Part of the book series: Springer Handbooks ((SHB))

Abstract

Optical detectors are applied in all fields of human activities from basic research to commercial applications in communication, automotive, medical imaging, homeland security, and other fields. The processes of light interaction with matter described in other chapters of this handbook form the basis for understanding the optical detectors physics and device properties.

This chapter starts with a brief historical sketch of first experiments facilitating development of optical detectors. The overview of photo detector types is followed by the description of the most important properties and different detection regimes.

A detailed description of different types of optical detectors is presented in the following sections. The device structure and physics as well as important materials for fabrication, figures of merit, and brief application notes are given for photoconductors, photodiodes, quantum well photodetectors, semiconductor detectors with intrinsic amplification, charge transfer detectors, photoemissive detectors, and thermal photodetectors. The chapter includes also a brief overview of imaging systems, principles of black and white and color photography, and recent developments in polymer-, hybrid-, and nanotechnology-based optical detectors.

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Abbreviations

2-D:

two-dimensional

APD:

avalanche photodiode

BLIP:

background-limited infrared photodetector

CCD:

charge-coupled device

CCIS:

charge-coupled image sensor

CM:

carrier multiplication

CMOS:

complementary metal–oxide–semiconductor detector

CTIS:

charge transfer image sensor

DEPFET:

depleted field effect transistor structure

DQE:

detective quantum efficiency

EQE:

external quantum efficiency

FET:

field effect transistor

FTF:

Fourier-transform function

FWHM:

full width at half-maximum

HOMO:

highest occupied molecular orbital

IR:

infrared

ITO:

indium–tin oxide

LIDAR:

light detecting and ranging

LSP:

localized surface plasmon

LUMO:

lowest unoccupied molecular orbital

LWIR:

long-wavelength IR

LiF:

lithium fluoride

MCP:

microchannel plate

MCT:

mercury cadmium telluride

MESFET:

metal semiconductor field-effect transistor

MIS:

metal–insulator–semiconductor

MOS:

metal–oxide–semiconductor

MOSFET:

metal?oxide?semiconductor field-effect transistor

MSM:

metal–semiconductor–metal

MTF:

modulation transfer function

NEP:

noise equivalent power

NIR:

near infrared

OD:

optical density

OD:

output diode

P3HT:

poly(3-hexylthiophene)

PDE:

photon-detection efficiency

PIR:

passive infrared detector

PMT:

photomultiplier tube

PPV:

poly-para-phenylenevinylene

PTCBI:

polymer 3,4,9,10-perylenetetracarboxylic bis-benzimidazole

QDIP:

quantum-dot infrared photodetector

QE:

quantum efficiency

QWIP:

quantum well infrared photodetector

RF:

radio frequency

SNSPD:

superconducting nanowire single-photon detector

SOI:

silicon-on-insulator

SPP:

surface plasmon polariton

SiPM:

silicon photomultiplier

TGS:

triglycerine sulfate

TO:

thermooptic

TO:

topology optimization

TV:

television

UV:

ultraviolet

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  1. Engineering Department, Advanced Photonix, Inc., 1240 Avenida Acaso, 93012, Camarillo, CA, USA

    Bernd Tabbert

  2. 21 Nopalitos Way, 92656, Aliso Viejo, CA, USA

    Alexander Goushcha

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  1. Department of Physics, University of Kassel, Heinrich-Plett-Str. 40, 34132, Kassel, Germany

    Frank Träger

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Tabbert, B., Goushcha, A. (2012). Optical Detectors. In: Träger, F. (eds) Springer Handbook of Lasers and Optics. Springer Handbooks. Springer, Berlin, Heidelberg. https://doi.org/10.1007/978-3-642-19409-2_9

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