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Properties of Nitrided Oxides on SiC

  • Chapter
Silicon Carbide

Part of the book series: Advanced Texts in Physics ((ADTP))

Abstract

If there is a singular property of silicon that has contributed to its success as a semiconductor material, it is the native oxide, SiO2. This oxide can be thermally grown to form an effective insulating layer as part of the gate in a metal-oxide-semiconductor field-effect transistor (MOSFET) structure. Silicon Carbide also has the ability to grow a similar oxide, and when combined with the bulk properties of wide bandgap, high thermal conductivity and extremely low intrinsic free carrier concentration, will lead to an enormous number of applications. This means that as far as the gate oxide is concerned SiC can be processed in much the same way as Si, the exception being that the processing temperatures are generally higher.

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Author information

Authors and Affiliations

  1. School of Microelectronic Engineering, Griffith University, Nathan, Queensland, 4111, Australia

    S. Dimitrijev, H. B. Harrison, P. Tanner, K. Y. Cheong & J. Han

  2. School of Materials and Mineral Resources Engineering, University Sains Malaysia, Engineering Campus, 14300, Nibong Tebal, Seberang Perai, Penang, Malaysia

    K. Y. Cheong

Authors
  1. S. Dimitrijev
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  2. H. B. Harrison
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  3. P. Tanner
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  4. K. Y. Cheong
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  5. J. Han
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Editor information

Editors and Affiliations

  1. Department of Physics and Astronomy, University of Pittsburgh, Pittsburgh, PA, 15260, USA

    W. J. Choyke

  2. Department of Electronic Science and Engineering Yoshidahonmachi, Kyoto University, Sakyo, Kyoto, 606-8501, Japan

    H. Matsunami

  3. Institute of Applied Physics, University of Erlangen-Nürnberg, Staudtstrasse 7/A3, 91058, Erlangen, Germany

    G. Pensl

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© 2004 Springer-Verlag Berlin Heidelberg

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Dimitrijev, S., Harrison, H.B., Tanner, P., Cheong, K.Y., Han, J. (2004). Properties of Nitrided Oxides on SiC. In: Choyke, W.J., Matsunami, H., Pensl, G. (eds) Silicon Carbide. Advanced Texts in Physics. Springer, Berlin, Heidelberg. https://doi.org/10.1007/978-3-642-18870-1_15

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  • DOI: https://doi.org/10.1007/978-3-642-18870-1_15

  • Publisher Name: Springer, Berlin, Heidelberg

  • Print ISBN: 978-3-642-62333-2

  • Online ISBN: 978-3-642-18870-1

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