Structural, elastic, and electronic properties of the group-III nitride and the group-II oxide semiconductors are introduced here with basic material parameters. These materials generally have uniaxial anisotropy due to the wurtzite-type crystal structure. The basic formulae on the elastic properties and the electronic structures characterized by the uniaxial anisotropy are presented in this chapter.
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Hanada, T. (2009). Basic Properties of ZnO, GaN, and Related Materials. In: Yao, T., Hong, SK. (eds) Oxide and Nitride Semiconductors. Advances in Materials Research, vol 12. Springer, Berlin, Heidelberg. https://doi.org/10.1007/978-3-540-88847-5_1
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