Abstract
A brief overview of crystal growth techniques and crystal analysis and characterization methods is presented here. This is a prelude to the details in subsequent chapters on fundamentals of growth phenomena, details of growth processes, types of defects, mechanisms of defect formation and distribution, and modeling and characterization tools that are being employed to study as-grown crystals and bring about process improvements for better-quality and large-size crystals.
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Abbreviations
- AFM:
-
atomic force microscopy
- APS:
-
Advanced Photon Source
- BCF:
-
Burton–Cabrera–Frank
- DKDP:
-
deuterated potassium dihydrogen phosphate
- EPR:
-
electron paramagnetic resonance
- FWHM:
-
full width at half-maximum
- IR:
-
infrared
- KDP:
-
potassium dihydrogen phosphate
- LED:
-
light-emitting diode
- LPE:
-
liquid-phase epitaxy
- MBE:
-
molecular-beam epitaxy
- MOVPE:
-
metalorganic vapor-phase epitaxy
- PL:
-
photoluminescence
- SC:
-
slow cooling
- SCBG:
-
slow-cooling bottom growth
- SEM:
-
scanning electron microscope
- SEM:
-
scanning electron microscopy
- TED:
-
threading edge dislocation
- TEM:
-
transmission electron microscopy
- TSD:
-
threading screw dislocation
- TSSG:
-
top-seeded solution growth
- TSZ:
-
traveling solvent zone
- VPE:
-
vapor-phase epitaxy
- VTGT:
-
vertical temperature gradient technique
- XRT:
-
x-ray topography
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Dhanaraj, G., Byrappa, K., Prasad, V.(., Dudley, M. (2010). Crystal Growth Techniques and Characterization: An Overview. In: Dhanaraj, G., Byrappa, K., Prasad, V., Dudley, M. (eds) Springer Handbook of Crystal Growth. Springer Handbooks. Springer, Berlin, Heidelberg. https://doi.org/10.1007/978-3-540-74761-1_1
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