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Ohmic and Rectifying Contacts to Porous Silicon

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Handbook of Porous Silicon

Abstract

Porous silicon (PS) is a promising material for photonic, optoelectronic, and sensor devices. However, achieving stable metallic contacts to porous silicon has been a challenge. Oxidation of the Si-Hx bond on porous silicon surface on exposure to aerial atmosphere is the main reason of the instability. This review highlights the attempts made to modify the PS surface and make stable ohmic and rectifying contacts. Data on different metals, alloys, and conducting polymers utilized to treat the surface of porous silicon prior to the formation of ohmic and rectifying contacts are provided in tabular form. The methods deployed to deposit the contact materials on porous silicon are also summarized. The performance of noble metal treatment of porous silicon surface by electroless deposition is highlighted.

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Authors and Affiliations

  1. IC Design & Fabrication Center, Department of Electronics & Telecommunication Engineering, Jadavpur University, 700032, Kolkata, India

    Jayita Kanungo & Sukumar Basu

Authors
  1. Jayita Kanungo
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  2. Sukumar Basu
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Correspondence to Jayita Kanungo .

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Editors and Affiliations

  1. Malvern Hills Science Park, Chief Scientific Officer, Intrinsiq Mate, Malvern, Worcestershire, United Kingdom

    Leigh Canham

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Kanungo, J., Basu, S. (2014). Ohmic and Rectifying Contacts to Porous Silicon. In: Canham, L. (eds) Handbook of Porous Silicon. Springer, Cham. https://doi.org/10.1007/978-3-319-04508-5_72-1

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  • DOI: https://doi.org/10.1007/978-3-319-04508-5_72-1

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  • Online ISBN: 978-3-319-04508-5

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