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Design of Double-Pole Four-Throw RF Switch

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MOSFET Technologies for Double-Pole Four-Throw Radio-Frequency Switch

Part of the book series: Analog Circuits and Signal Processing ((ACSP,volume 122))

Abstract

The industrial, scientific, and medical (ISM) radio bands were originally reserved for the use of radio-frequency (RF) energy for industrial, scientific, and medical purposes such as radio-frequency process heating, microwave ovens, and medical diathermy machines. The powerful emissions of these devices can create electromagnetic interference and disrupt radio communication using the same frequency, so these devices were limited to certain bands of frequencies. In general, communication equipment operating in these bands must accept any interference generated by ISM equipment [1, 2]. Nowadays CMOS wideband switches are designed primarily to meet the requirements of devices transmitting at ISM band frequencies (900 MHz and above). The low insertion loss, high isolation between ports, low distortion, and low current consumption of these devices make them an excellent solution for several high-frequency applications [3].

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Authors and Affiliations

  1. Department of Electronics and Communication Engineering, Jaypee University of Information Technology, Solan, Himachal Pradesh, India

    Viranjay M. Srivastava (Assistant Professor) & Ghanshyam Singh (Professor)

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  1. Viranjay M. Srivastava
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  2. Ghanshyam Singh
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Srivastava, V.M., Singh, G. (2014). Design of Double-Pole Four-Throw RF Switch. In: MOSFET Technologies for Double-Pole Four-Throw Radio-Frequency Switch. Analog Circuits and Signal Processing, vol 122. Springer, Cham. https://doi.org/10.1007/978-3-319-01165-3_2

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  • DOI: https://doi.org/10.1007/978-3-319-01165-3_2

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