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Atomically Thin Resonant Tunnel Diodes

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Properties of Synthetic Two-Dimensional Materials and Heterostructures

Part of the book series: Springer Theses ((Springer Theses))

Abstract

Vertical integration of 2D vdW materials is predicted to display novel electronic and optical properties absent in their constituent layers [1]. In this chapter the direct synthesis of two unique, atomically thin, multi-junction heterostructures is demonstrated by combining graphene with some important 2D TMDC: MoS2, MoSe2, and WSe2, aiming to achieve “epitaxy-grade” material interfaces. Surprisingly, the realization of MoS2-WSe2-graphene and WSe2-MoSe2-graphene heterostructures leads to resonant tunneling in an atomically thin stack with spectrally narrow, room-temperature negative differential resistance characteristics.

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Authors and Affiliations

  1. Center for Nanophase Materials Sciences, Oak Ridge National Laboratory, Oak Ridge, TN, USA

    Yu-Chuan Lin

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  1. Yu-Chuan Lin
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Lin, YC. (2018). Atomically Thin Resonant Tunnel Diodes. In: Properties of Synthetic Two-Dimensional Materials and Heterostructures. Springer Theses. Springer, Cham. https://doi.org/10.1007/978-3-030-00332-6_7

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