Abstract
The effective mass approximation for conduction electrons tunnelling through a semiconductor heterostructure barrier is described. The current-voltage characteristics of a variety of double barrier resonant tunnelling devices with wide quantum wells (60–120 nm) and based on the (AlGa)As/GaAs system are presented. In these structures a large number of electron standing wave resonances are observed in I(V). The effect of a transverse magnetic field (B parallel to the plane of the barriers) on the resonances in I(V) is examined. Resonant tunnelling into hybrid magneto-electric states of the quantum well is observed and is interpreted using the effective mass approximation.
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References
E. E. Mendez; “Physics and Applications of Quantum Wells and Superlattices”, NATO AST Series B 170: 159 (1987).
E. S. Alves, L. Eaves, M. Henini, O. H. Hughes, M. L. Leadbeater, F. W. Sheard, G. A. Toombs, G. Hill, M. A. Pate, Electronics Letts 24 (18): 1191 (1988).
A. Zaslavsky, V. J. Goldman, D. C. Tsui, Appl. Phys. Lett. 53: 1408 (1988).
E. S. Alves, M. L. Leadbeater, L. Eaves, M. Henini, O. H. Hughes, A. Celeste, J. C. Portal, G. Hill, M. A. Pate, Superlattices and Microstructures 5 (4): 527 (1989).
L. Eaves, E. S. Alves, T. J. Foster, M. Henini, O. H. Hughes, M. L. Leadbeater, F. W. Sheard, G. A. Toombs, K. S. Chan, A. Celeste, J. C. Portal, G. Hill, M. A. Pate, Springer Series in Solid State Sciences 83: “Physics and Technology of Submicron Structures”, ed. G. Bauer and F. Kuchar ( Springer-Verlag, Berlin, 1988 ) p. 74.
M. Helm, F. M. Peeters, P. England, J. R. Hayes, E. Colas, Phys. Rev. B 39: 3427 (1989).
S. Sen, F. Capasso, A. C. Gossard, R. A. Spah, A. L. Hutchinson and S. N. G. Chu, Appl. Phys. Lett. 51: 18 (1987).
L. I. Schiff, Quantum Mechanics. 1st edition (1949), ( New York, McGraw-Hill, chapter 5 ).
M. L. Leadbeater, L. Eaves, P. E. Simmonds, G. A. Toombs, F. W. Sheard, P. A. Claxton, G. Hill and M. A. Pate, Solid State Electron. 31: 707 (1988).
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© 1990 Plenum Press, New York
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Eaves, L. (1990). Introduction to Resonant Tunnelling in Semiconductor Heterostructures. In: Chamberlain, J.M., Eaves, L., Portal, JC. (eds) Electronic Properties of Multilayers and Low-Dimensional Semiconductor Structures. NATO ASI Series, vol 231. Springer, Boston, MA. https://doi.org/10.1007/978-1-4684-7412-1_14
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DOI: https://doi.org/10.1007/978-1-4684-7412-1_14
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