Abstract
The importance of thorough material characterization in CVD diamond research is excellently expressed by R.C. DeVries in his 1987 review of metastable diamond formation1: “Man-made diamond synthesis may yet be pushed back in time when a careful study is given to the soots from ancient cave walls”. Nowadays such careful studies are possible and one of the major differences between the early days2–5 of diamond CVD and the modern era6–10 of low pressure diamond synthesis is probably the easy access to highly sophisticated, fast and extremely sensitive analytical tools to distinguish diamond from any other form of carbon as well as to determine the physical and chemical properties of the deposited material. In their 1968 paper, J. Angus and coworkers describe in detail the many tedious methods, including weight determination, visual inspection, traditional chemical analysis, chemical etching, density measurements, x-ray and electron diffraction, they applied. Their task was particularly difficult because they had to analyze diamond deposited onto diamond seeds. On the other hand, it is necessary to decisively characterize the deposited material, not only to distinguish it from other carbon modifications, but also to adjust the preparation conditions in order to tailor the properties of the diamond film to specific applications.
Access this chapter
Tax calculation will be finalised at checkout
Purchases are for personal use only
Preview
Unable to display preview. Download preview PDF.
References
R.C. DeVries, Annu. Rev. Mater. Sci., 17, p. 161 (1987)
B.V. Spitzyn and B.V. Derjaguin, author’s certificate (patent application), July 10, 1956;
B.V. Spitzyn and B.V. Derjaguin USSR Patent 339 134, May 5, 1980.
W. Eversole, US Patents 3030187 and 3030188 (1962) (filed July 23, 1958 ).
J.C. Angus, H.A. Will, W.S. Stanko, J. Appl. Phys. 39, p. 2915 (1968).
H. Schmellenmeier, Z. Phys. Chem. 205, p. 349 (1955).
B.V. Spitzyn, L.L. Bouilov and B.V. Derjaguin
J. Cryst. Growth, 52, p. 219 (1981).
S. Matsumoto, Y. Sato, M. Kamo, N. Setaka, Jpn. J. Appl. Phys. Part 2, 21, p. L183 (1982).
M. Kamo, Y. Sato, S. Matsumoto, and N. Setaka, J. Cryst. Growth, 62, p. 642 (1983).
R. Messier, A.R. Badzian, T. Badzian, K.E. Spear, P. Bachmann, and R. Roy,Thin Solid Films, 153, p. 1 (1987)
see, e.g., the following books, review articles and the references therein:
a) Proceedings of the “First International Symposium on Diamond and Diamond-Like Films”,The Electrochemical Society,Pennington, NJ, Proceedings Vol. 89–12 (1989).
Materials Research Society, Pittsburgh, PA, Extended Abstracts, Vol.EA-15 (1988).
B.V. Spityn, L.L. Bouilov, and B.V. Derjaguin, Prog.Crystal Growth and Charact. 17, p. 79 (1988).
A.R. Badzian and R.C. DeVries, Mater. Res. Bull. 23, p. 385 (1988).
J.C.Angus and C.C. Hayman, Science, 241, p. 913 (1988).
K.E. Spear, J. Am. Ceram. Soc. 72, p. 171 (1989).
P.K. Bachmann and R.Messier, Chemical & Engineering News, May 15, p. 24 (1989).
Diamond, Boron Nitride, Silicon Carbide and Related Wide Bandgap Semiconductors“ (edited by J.T. Glass, R.F. Messier, and N. Fujimori), MRS Symposium Proc. Vol. 162, Materials Research Society, Pittsburgh, PA, (1989).
B.V. Spitzyn, J. Cryst. Growth 99, 1162 (1990).
“The Crystallization of Diamond” by D.V. Fedoseev, B.V. Derjaguin, and I.G. Varasayskaja (Part 1) and “The Growth of Diamond and Graphite from the Gas Phase” by B.V. Derjaguin and D.V. Fedoseev (Part 2) in “Diamond Growth and Films” edited by UCFMG, Elsevier Applied Science, London, New York (1989).
K. Kobashi, K. Nishimura, Y. Kawate, and T. Horiuchi, Phys. Rev. B, 38, no. 6, p. 4067 (1988).
Y. Sato, M. Kamo, Surf. Coat. Technol. 39–40, no. 1–3, p. 183 (1989).
Y. Mitsuda, Y. Kojima, T. Yoshida, K. Akashi, J.of Mat. Science, 22, p. 1557 (1987).
Y. Liou, A. Inspektor, D. Knight, R. Weimer, D. Pickrell, A.R. Badzian, and R. Messier. Proc. SPIE 1146, p. 12 (1989).
W. Zhu, R. Messier, and A.R. Badzian, Proceedings of the “First International Symposium on Diamond and Diamond-Like Films”, The Electrochemical Society,Pennington, NJ, Proceedings Vol. 89–12, 61 (1989).
C. Chen, Y.C. Huang, S. Hosomi, and T. Yoshida, Mater. Res. Bull. 24, no. 1, p. 87 (1989).
K. Kobashi, K. Nishimura, K. Miyata, Y. Kawate, J.T. Glass, and B.E. Williams, Proc. SPIE 969, p. 159 (1988).
P.K. Bachmann, W. Drawl, D. Knight, R. Weimer, and R.F. Messier, in “Diamond and Diamond-Like Materials”(edited by A. Badzian, M. Geis, and G. Johnson), Mat. Res. Soc., Pittsburgh, PA, Extended Abstracts Vol. EA-15, p.99 (1988).
T. Hartnett, A.R. Badzian, and K.E. Spear, in “Diamond and Diamond-Like Materials”(edited by A. Badzian, M. Geis, and G. Johnson), Mat. Res. Soc., Pittsburgh, PA, Extended Abstracts Vol. EA-15, p.103 (1988).
P.K. Bachmann, D.Leers, H. Lydtin, R.Raue,C. Ronda, and D.U. Wiechert,accepted for presentation at the “2.Int.Conf. on the New Diamond Science and Technology” Sept. 23–26, Washington, D.C. USA (1990).
P.K. Bachmann, H. Lydtin, D.U. Wiechert, J.J. Beulens, G. Kroesen, D.C. Schram, in “Proceedings of the Third International Conference on Surface Modification Technologies”, Sept. 1989, Neuchatel, Switzerland, The Minerals, Metals & Materials Society (TMS ), Warrendale, PA, (1990).
P.K. Bachmann and H. Lydtin, in “Characterization of Plasma-Enhanced CVD Processes” (edited by G. Lucovsky, D.E. Ibbotson, and D.W. Hess), MRS Symposium Proccedings, Vol. 165, Materials Research Soc. Pittsburgh, PA, USA, in press (1989).
J.E. Field (ed.) “The Properties of Diamond”, Academic Press, London, New York, San Francisco, (1979).
H. Kawarada, K. Nishimura, K.S. Mar, Y. Yokota, J. Suzuki, T. Ito, and A. Hiraki, in “Diamond and Diamond-Like Materials”(edited by A. Badzian, M. Geis, and G. Johnson), Mat. Res. Soc., Pittsburgh, PA, Extended Abstracts, Vol. EA-15, p.89 (1988).
B.E. Williams, J.T. Glass, R.F. Davis, K. Kobashi, and Y. Kawate, in “Diamond and Diamond-Like Materials”(edited by A. Badzian, M. Geis, and G. Johnson), Mat. Res. Soc., Pittsburgh, PA, Extended Abstracts Vol. EA-15, p.59 (1988).
J.T. Glass, B.E. Williams, and R.F. Davis, Proc. SPIE, Vol. 877, p. 56 (1988).
J. Narayan, A.R. Srivatsa, M. Peters, S. Yokota, and K.V. Ravi, Appl. Phys. Lett. 53, no. 19, p. 1823 (1988)
W. Zhu, A.R. Badzian, and R.F. Messier, J. Mater. Res. Vol. 4, no. 3, p. 659 (1989).
W. Zhu, C.A. Randall, A.R. Badzian, and R.F. Messier, J. Vac. Sci. Technol. A, Vol. 7, no. 3, p. 2315 (1989).
B.E. Williams and J.T. Glass, J. Mater. Res. Vol. 4, no. 2, p. 373 (1989).
A.R. Srivatsa, J. Narayan, and K.V. Ravi, in Proceedings of the “First International Symposium on Diamond and Diamond-Like Films”, The Electrochemical Society,Pennington, NJ, Proceedings Vol. 89–12, 215 (1989).
R.E. Clausing, L. Heatherly, K.L. More, and G.M. Begun, Surf. Coat. Technol. Vol. 39–40, no.1–3, p.199(1989).
B.E. Williams, H.S. Kong, and J.T. Glass, J. Mater. Res. 5, no.4, p.806(1990).
M.S. Wong, W.A. Chiou, F.R. Chen,D.X. Li, and R.P.H. Chang, MRS Symposium Proceedings, Vol. 139, p. 363 (1989).
D. Pickrell, W. Zhu, A. R. Badzian, R. Newnham, and R.F. Messier, submitted to J. Mater. Res. (1990).
A.R. Badzian, Advances in X-Ray Analysis, 31, p. 113 (1987).
P.K. Bachmann, W. Drawl, D. Knight, R. Weimer, Y. Liou, and R.F. Messier, Diamond Technology Initiative Symposium, July 12–14, 1988, Crystal City, Arlington, VA. Technical Digest, Paper T 20, 1988.
K. Kitahama, Appl. Phys. Lett. 53, no. 19, p. 1812(1988).
C. Ramaswamy, Nature, 125, p. 704 (1930).
S.A. Solin and A.K. Ramdas, Phys. Rev. Bl,p. 1687 (1970).
D.S. Knight and W.B. White, J. Mater. Res. 4, no. 2, p. 385 (1989).
D.S. Knight and W.B. White, Proc.SPIE,Vol. 1055, p. 144 (1989).
R.J. Nemanich, J.T. Glass, G. Lucovsky, and R.E Shroder, J. Vac. Sci. Technol. A6, 3, p. 1783 (1988).
R.E. Shroder, R.J. Nemanich, and J.T. Glass, Proc. SPIE, Vol. 969, p. 79 (1988).
M.J. Mehl and W.E. Pickett, Proc. SPIE, Vol. 1055, p. 181 (1989).
R.O. Dillon, J.A. Woollam, and V. Katkanant, Phys. Rev. B, 29, no. 6, p. 3482 (1984).
H.Tsai and D.B. Bogy, J. Vac. Sci. Technol. A5, no. 6, p. 3287 (1987).
W.A. Yarbrough and R. Roy, in “Diamond and Diamond-Like Materials”(edited by A. Badzian, M. Geis, and G. Johnson), Mat. Res. Soc., Pittsburgh, PA, Extended Abstracts Vol. EA-15, p.33 (1988).
N. Wada, P.J. Gaczi, and S.A. Solin, J. Non-Crystalline Solids, 35–36, p. 543 (1980)
A. Ono, T. Baba, H. Funamoto, and A Nishikawa, Japan. J. Appl. Res. 25, no. 10, p. L808 (1986).
K. Nishimura, K. Das, J.T. Glass, and R.J. Nemanich, “Proceedings of NATO Advanced Research Workshop on the Physics and Chemistry of Carbides Nitrides, and Borides”, Manchester, U.K. Oct. (1989).
P.K. Bachmann and D.U. Wiechert,accepted for presentation at the “2.Int.Conf.on the New Diamond Science and Technology” Sept. 23–26, Washington, D.C. USA (1990).
Y. Liou, R. Weimer, D. Knight, and R. Messier Appl. Phys. Lett. 56, no. 5, p. 437 (1990).
D.S. Knight, R. Weimer, L. Pilione, and W.B. White, Appl. Phys. Lett. 56, no. 14, p1320 (1990).
see e.g.
G. Davis, in “The Properties of Diamond” edited by J.E. Field, Academic Press, London, New York, San Francisco, p. 165 (1979).
J.P.F. Sellshop, in “The Properties of Diamond” edited by J.E. Field, Academic Press, London, New York, San Francisco, p. 155 (1979).
A.T. Collins, J. Phys.: Condensed Matter, 1, p. 439 (1989).
Y.K. Vohra, C. A. Vanderborgh, S. Desgreniers, and A.L. Ruoff, Phys. Rev. B, 39, no. 8, p 5464 (1989).
W.J.P. van Enckevort and H.G.M. Lochs, J. Appl. Phys. 64, no. 1 (1988).
P.J. Dean, Phys. Rev. A139, p. 588 (1965).
V.S. Vavilov, A.A. Gippius, A.M. Zaitsev, B.V. Derjaguin, B.V. Spitzyn, and A.E. Aleksenko, Sov. Phys. Semicond. 14, p. 1078 (1980)
A.T. Collins, M. Kamo, and Y. Sato, J. Phys.: Condensed Matter, 1, p. 4029 (1989).
Y. Yokota, H. Kawarada, and A. Hiraki, in “Diamond, Boron Nitride, Silicon Carbide and Related Semiconductors” (edited by J.T. Glass, R.F. Messier, and N. Fujimori), MRS Symposium Proc. Vol. 162, Materials Research Society, Pittsburgh, PA, (1989).
L.H. Robins, L.P. Cook, E. N. Farabaugh,and A. Feldman, Phys. Rev. B, 39, no. 18 p. 13367 (1989).
W.D. Partlow, J.Ruan, R.E. Witkowski, W.J. Choyke, and D.S. Knight, J. Appl. Phys. in press, June (1990).
G. Janssen, W.J.P. van Enckevort, J.J.D. Schaminee, W. Vollenberg, L.J. Gilling, and M. Seal, to appear in J. Cryst. Growth (1990).
L. Pilione, D.S. Knight and P.K. Bachmann, unpublished.
N. Yamamoto, J.C.H. Spencer, and D. Fathy, Phil. Mag. B, 49, no. 6, p. 609 (1984).
M. Geis, presented at the “Diamond, Boron Nitride, Silicon Carbide and Related Wide Bandgap Semiconductors” Symposium, MRS Fall Meeting, paper F4.1, Boston (1989).
for a recent review see, e.g., A.E.T. Kuiper, Surface and Interface Analysis, 16, in press (1990).
K. Schmidt, K. Reichelt, B. Strizker, and J. Zou, Fresenius Z. Anal. Chem. 333, p. 326 (1989).
W. Lanford, data presented at the 2nd Annual Diamond Technology Initiative Symposium, Durham, NC, 1988.
W. Lanford, Solar Cells, 2, p. 351 (1980).
H.G. Maguire, T.E. Derry, W.S. Brooks, J.P.F. Sellschop and M. Kamo, South African Journal of Science, 84,p. 696 (1988)
for thermal conductivity measurements of CVD diamond films, see e.g.
D.T. Morelli, C.P. Beet, and T.A. Perry J. Appl. Phys. 64, no. 6, p. 3063 (1988).
A. Ono et al, ref. 51.
R. Pryor, R.L. Thomas, P.K. Kuo, and L.D. Favro Proc. SPIE Vol. 1146, p. 68 (1989). and references therein.
for electrical properties of CVD diamond, see, e.g.
G. Sh. Gildenblatt, S.A. Grot, C.R. Wronski, A.R. Badzian, T. Badzian, and R. Messier, Appl. Phys. Lett. 53, no. 7 p. 586 (1988).
M.W. Geis, N.N. Efremow, and D.D. Rathman, J. Vac. Sci. Technol. A6, p. 1953 (1988).
G. Sh. Gildenblatt, S.A. Grot, C.W. Hatfield, C.R. Wronski, A.R. Badzian, T. Badzian, and R. F. Messier Mater. Res. Bull. 25, no.1 p. 129 (1990).and references therein.
for mechanical properties of CVD diamonds, see e.g.
B. Lux and R. Haubner, Proc. 12th Int. Plansee-Seminar, paper C2, p. 615 (1989)
R.C. McCune, D.W. Hofman, T.J. Whalen, and C.O. McHugh, MRS Symp. Proc. Vol. 130, p. 261, (1989).
N. Kikuch and H. Yoshimura, in “New Diamond”, Japanese New Diamond Forum, p.42 (1988).and references therein.
M. Yoder, Proc. SPIE, Vol. 969 p. 106 (1988).
M. Seal and W.J.P. van Enckevort, Proc. SPIE, Vol. 969, p. 144 (1988).
K.A. Snail, L.M. Hanssen, and A.A. Morrish, Proc. SPIE, Vol. 1146, p. 144 (1989).
X. X. Bi, P.C. Eklund, J.G. Zhang, A.M. Rao, T.A. Perry, and C.P. Beetz, J. Mater. Res. 5, no. 4, p. 811 (1990).
T. Feng, Proc. SPIE, Vol. 1146, p. 159 (1989).
Ch. Wild, N. Herres, J. Wagner, and P. Koidl, Proceedings of the “First International Symposium on Diamond and Diamond-Like Films”,The Electrochemical Society,Pennington, NJ, Proceedings Vol. 89–12, p. 283 (1989).
J. Cuomo, IBM T. Watson Res.Lab. Yorktown Heights,N.Y., USA, D. Hoover, Air Products, Allentown, NJ, USA, personal communication.
R. Seitz, Proc. SPIE, Vol. 969, p. 124 (1988).
Author information
Authors and Affiliations
Editor information
Editors and Affiliations
Rights and permissions
Copyright information
© 1991 Plenum Press, New York
About this chapter
Cite this chapter
Bachmann, P.K., Wiechert, D.U. (1991). Characterization and Properties of Artificially Grown Diamond. In: Clausing, R.E., Horton, L.L., Angus, J.C., Koidl, P. (eds) Diamond and Diamond-like Films and Coatings. NATO ASI Series, vol 266. Springer, Boston, MA. https://doi.org/10.1007/978-1-4684-5967-8_46
Download citation
DOI: https://doi.org/10.1007/978-1-4684-5967-8_46
Publisher Name: Springer, Boston, MA
Print ISBN: 978-1-4684-5969-2
Online ISBN: 978-1-4684-5967-8
eBook Packages: Springer Book Archive