Abstract
The application of simple model densities of states to account for the optical properties of semiconductors and insulators, and their dependence upon various external parameters, is discussed. Special emphasis is placed on the materials of the diamond-zincblende family; several materials with rocksalt structure are also considered. Our model densities of states are obtained by approximating the real energy bands by perfectly parabolic bands extending to infinity, so as to simulate the strongest interband critical points. Critical points with large effective masses (parallel valence and conduction bands) along one or two dimensions give rise to essentially two- and one-dimensional bands.
Supported by the National Science Foundation and the Army Research Office, Durham.
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Cardona, M., Pollak, F.H. (1971). Optical Properties and Model Density of States. In: Albers, W.A. (eds) The Physics of Opto-Electronic Materials. Springer, Boston, MA. https://doi.org/10.1007/978-1-4684-1947-4_4
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DOI: https://doi.org/10.1007/978-1-4684-1947-4_4
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