Abstract
This chapter focuses on nonequilibrium carrier dynamics in semiconductors through the evaluation of time dependent optical experiments. Using ensemble Monte Carlo simulations coupled with detailed band structure calculations, we show how the evolution of photoexcited distribution functions are determined. Evaluating photoexcitation experiments with simple models (i.e., without Monte Carlo) poses severe approximations and leads to misunderstandings. We show that Monte Carlo simulations are essential to modeling photoexcitation experiments, but that calculating the distribution functions alone is not enough to fully understand the optical measurements. To relate to the experimental quantities of interest, the distribution functions must weighted by the optical matrix elements and joint density of states and summed over all allowed transitions. With complete calculations including Monte Carlo simulations, the optical experiments are shown to provide reliable details on scattering rates, relaxation channels, and band structure — valuable information for characterizing materials and carrier dynamics.
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Stanton, C.J., Bailey, D.W. (1991). Evaluating Photoexcitation Experiments Using Monte Carlo Simulations. In: Hess, K. (eds) Monte Carlo Device Simulation. The Springer International Series in Engineering and Computer Science, vol 144. Springer, Boston, MA. https://doi.org/10.1007/978-1-4615-4026-7_3
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DOI: https://doi.org/10.1007/978-1-4615-4026-7_3
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