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Strain Measurements in SiGe Devices by Aberration-Corrected High Resolution Electron Microscopy

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Microscopy of Semiconducting Materials 2007

Part of the book series: Springer Proceedings in Physics ((SPPHY,volume 120))

Summary

We measure elastic strains in Si grown on Si1−x Gexsubstrates by aberration-corrected high-resolution transmission electron microscopy (HRTEM). Images are analysed using geometric phase analysis (GPA). We carry out finite element modeling (FEM) of these systems coupled with full atomistic multislice simulations of the deformed structures. Comparison of the results from experiment and simulation reveals the high accuracy and reliability which can be obtained. Strain mapping with HRTEM benefits from the high signal-to-noise ratio of aberration-corrected images. In addition, images can be obtained for thicker crystals which limits thin film relaxation effects and facilitates specimen preparation.

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Author information

Authors and Affiliations

  1. CEMES-CNRS, 29 rue J. Marvig, Toulouse, 31055, France

    F Hüe, M J Hÿtch, J-M Hartmann, Y Bogumilowicz & A Claverie

  2. CEA-LETI, 17 rue des Martyrs, Grenoble, 38054, France

    J-M Hartmann

  3. STMicroelectronics, 850 rue Jean Monnet, Crolles Cedex, 38921, France

    Y Bogumilowicz

Authors
  1. F Hüe
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  2. M J Hÿtch
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  3. J-M Hartmann
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  4. Y Bogumilowicz
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  5. A Claverie
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Editor information

Editors and Affiliations

  1. Department of Electronic and Electrical Engineering, University of Sheffield, Mappin Street, Sheffield, S1 3JD, UK

    A. G. Cullis

  2. Department of Materials Science and Metallurgy, University of Cambridge, Pembroke Street, Cambridge, CB2 3QZ, UK

    P. A. Midgley

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© 2008 Springer Science+Business Media B.V.

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Hüe, F., Hÿtch, M., Hartmann, JM., Bogumilowicz, Y., Claverie, A. (2008). Strain Measurements in SiGe Devices by Aberration-Corrected High Resolution Electron Microscopy. In: Cullis, A.G., Midgley, P.A. (eds) Microscopy of Semiconducting Materials 2007. Springer Proceedings in Physics, vol 120. Springer, Dordrecht. https://doi.org/10.1007/978-1-4020-8615-1_31

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