Summary
In this work the indium concentration of uncapped InGaN samples is measured by three different transmission electron microscopy approaches which are based on measurement of local lattice plane distances. In the case of three dimensional, nanometre-sized, uncapped InGaN islands, an increase of the indium concentration from the base of the islands toward their tip is observed. Additionally, an indication is presented that the local indium concentration in the islands is influenced by the vicinity of other islands.
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Pretorius, A., Müller, K., Yamaguchi, T., Kröger, R., Hommel, D., Rosenauer, A. (2008). Concentration Evaluation in Nanometre-Sized In x Ga1-x N Islands Using Transmission Electron Microscopy. In: Cullis, A.G., Midgley, P.A. (eds) Microscopy of Semiconducting Materials 2007. Springer Proceedings in Physics, vol 120. Springer, Dordrecht. https://doi.org/10.1007/978-1-4020-8615-1_3
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DOI: https://doi.org/10.1007/978-1-4020-8615-1_3
Publisher Name: Springer, Dordrecht
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Online ISBN: 978-1-4020-8615-1
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