Abstract
This chapter contains both the description of advanced spintronic devices for logic and memory applications and the synthesis and characterization of some new magnetic materials that would lead to new paradigms in spintronics. The first part gives a brief introduction to spintronics and its history. First-generation spintronics has entered the mainstream of information technology through its utilization of the magnetic tunnel junction in applicable devices such as read head sensors for hard disk drives and magnetic random access memory. We also discuss the conceptual spintronic devices, including spin torque transfer random access memory, spin-polarized field-effect transistor, and spin-based qubit quantum processor, and their potential impacts on information technology. The future of spintronic devices requires next-generation spintronic materials. The second part of the chapter is dedicated to the synthesis and characterization of some novel magnetic materials, including ferromagnetic oxides and diluted magnetic Group IV semiconductors.
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Additional Reading on Spintronics
S. Wolf and D. Treger, Spintronics: A new paradigm for electronics for the new millennium, IEEE Trans. Magnet. 36, 2748 (2000).
Proceedings of the IEEE special issue on Spintronics Technology, May 2003, vol. 91, no. 5.
S. Wolf et al., Spintronics: A spin-based electronics vision for the future, Science 294, 1488–1495 (2001).
References
I.K. Schuller. Transport properties of the compositionally modulated alloy Cu/Ni. in AIP Conf. Proc. 1979.
M.N. Baibich, J.M. Broto, A. Fert, F.N. Vandau, F. Petroff, P. Eitenne, G. Creuzet, A. Friederich, and J. Chazelas, Giant magnetoresistance of (001)Fe/(001) Cr magnetic superlattices. Physical Review Letters, 1988. 61(21): 2472–2475.
G.A. Prinz, Device physics – Magnetoelectronics. Science, 1998. 282(5394): 1660–1663.
S.A. Wolf, D.D. Awschalom, R.A. Buhrman, J.M. Daughton, S. von Molnar, M.L. Roukes, A.Y. Chtchelkanova, and D.M. Treger, Spintronics: A spin-based electronics vision for the future. Science, 2001. 294(5546): 1488–1495.
S.S.P. Parkin, K.P. Roche, M.G. Samant, P.M. Rice, R.B. Beyers, R.E. Scheuerlein, E.J. O’Sullivan, S.L. Brown, J. Bucchigano, D.W. Abraham, Y. Lu, M. Rooks, P.L. Trouilloud, R.A. Wanner, and W.J. Gallagher, Exchange-biased magnetic tunnel junctions and application to nonvolatile magnetic random access memory (invited). Journal of Applied Physics, 1999. 85(8): 5828–5833.
M. Durlam, D. Addie, J. Akerman, B. Butcher, P. Brown, J. Chan, M. DeHerrera, B.N. Engel, B. Feil, G. Grynkewich, J. Janesky, M. Johnson, K. Kyler, J. Molla, J. Martin, K. Nagel, J. Ren, N.D. Rizzo, T. Rodriguez, L. Savtchenko, J. Salter, J.M. Slaughter, K. Smith, J.J. Sun, M. Lien, K. Papworth, P. Shah, W. Qin, R. Williams, L. Wise, and S. Tehrani, A 0.18 μm 4 MB Toggling MRAM. IEDM Technical Digest, 2003, pp. 34.6.1–34.6.3.
D. Lammers, Freescale begins selling 4-Mbit MRAM. 2006. EE Times.
L. Berger, Emission of spin waves by a magnetic multilayer traversed by a current. Physical Review B, 1996. 54(13): 9353–9358.
J.C. Slonczewski, Current-driven excitation of magnetic multilayers. Journal of Magnetism and Magnetic Materials, 1996. 159(1–2): L1–L7.
J.A. Katine, F.J. Albert, R.A. Buhrman, E.B. Myers, and D.C. Ralph, Current-driven magnetization reversal and spin-wave excitations in Co/Cu/Co pillars. Physical Review Letters, 2000. 84(14): 3149–3152.
International Technology Roadmap for Semiconductors, (2006).
K.C. Hall, W.H. Lau, K. Gundogdu, M.E. Flatte, and T.F. Boggess, Nonmagnetic semiconductor spin transistor. Applied Physics Letters, 2003. 83(14): 2937–2939.
Y. Matsumoto, M. Murakami, T. Shono, T. Hasegawa, T. Fukumura, M. Kawasaki, P. Ahmet, T. Chikyow, S. Koshihara, and H. Koinuma, Room-temperature ferromagnetism in transparent transition metal-doped titanium dioxide. Science, 2001. 291(5505): 854–856.
H. Ohno, Making nonmagnetic semiconductors ferromagnetic. Science, 1998. 281(5379): 951–956.
D.P. Divincenzo, Quantum computation. Science, 1995. 270(5234): 255–261.
A. Steane, Quantum computing. Reports on Progress in Physics, 1998. 61(2): 117–173.
V.V. Zhurin, H.R. Kaufman, J.R. Kahn, and T.L. Hylton, Biased target deposition. Journal of Vacuum Science & Technology a-Vacuum Surfaces and Films, 2000. 18(1): 37–41.
J.J. Quan, S.A. Wolf, and H.N.G. Wadley, Low energy ion beam assisted deposition of a spin valve. Journal of Applied Physics, 2007. 101(7): 074302.
J.J. Quan, X.W. Zhou, and H.N.G. Wadley, Low energy ion assisted atomic assembly of metallic superlattices. Surface Science, 2006. 600(11): 2275–2287.
S. von Molnar, Spin electronics: From concentrated to diluted magnetic semiconductors and beyond. Journal of Superconductivity, 2003. 16(1): 1–5.
J.M.D. Coey and C.L. Chien, Half-metallic ferromagnetic oxides. Mrs Bulletin, 2003. 28(10): 720–724.
K. Suzuki and P.M. Tedrow, Resistivity and magnetotransport in CrO2 films. Physical Review B, 1998. 58(17): 11597–11602.
X.W. Li, A. Gupta, T.R. McGuire, P.R. Duncombe, and G. Xiao, Magnetoresistance and hall effect of chromium dioxide epitaxial thin films. Journal of Applied Physics, 1999. 85(8): 5585–5587.
R.J. Soulen, J.M. Byers, M.S. Osofsky, B. Nadgorny, T. Ambrose, S.F. Cheng, P.R. Broussard, C.T. Tanaka, J. Nowak, J.S. Moodera, A. Barry, and J.M.D. Coey, Measuring the spin polarization of a metal with a superconducting point contact. Science, 1998. 282(5386): 85–88.
K. Schwarz, Cro2 Predicted as a half-metallic ferromagnet. Journal of Physics F-Metal Physics, 1986. 16(9): L211–L215.
H.A. Bullen and S.J. Garrett, Epitaxial growth of CrO2 thin films on TiO2(110) surfaces. Chemistry of Materials, 2002. 14(1): 243–248.
W.J. DeSisto, P.R. Broussard, T.F. Ambrose, B.E. Nadgorny, and M.S. Osofsky, Highly spin-polarized chromium dioxide thin films prepared by chemical vapor deposition from chromyl chloride. Applied Physics Letters, 2000. 76(25): 3789–3791.
S.J. Liu, J.Y. Juang, K.H. Wu, T.M. Uen, Y.S. Gou, and J.Y. Lin, Transport properties of CrO2 (110) films grown on TiO2 buffered Si substrates by chemical vapor deposition. Applied Physics Letters, 2002. 80(22): 4202–4204.
L. Ranno, A. Barry, and J.M.D. Coey, Production and magnetotransport properties of CrO2 films. Journal of Applied Physics, 1997. 81(8): 5774–5776.
K. Kohler, M. Maciejewski, H. Schneider, and A. Baiker, Chromia supported on titania .5. Preparation and characterization of supported CrO 2 , CrOOH, and Cr2O 3 . Journal of Catalysis, 1995. 157(2): 301–311.
K.G. West, J.W. Lu, J. Yu, D.M. Kirkwood, W. Chen, Y. Pei, J. Claassen, and S.A. Wolf, Growth and characterization of vanadium dioxide thin films prepared by reactive-biased target ion beam deposition. Journal of Vacuum Science & Technology A, 2008. 26(1): 133–139.
Y. Matsumoto, R. Takahashi, M. Murakami, T. Koida, X.J. Fan, T. Hasegawa, T. Fukumura, M. Kawasaki, S.Y. Koshihara, and H. Koinuma, Ferromagnetism in co-doped TiO 2 rutile thin films grown by laser molecular beam epitaxy. Japanese Journal of Applied Physics Part 2-Letters, 2001. 40(11B): L1204–L1206.
H. Toyosaki, T. Fukumura, Y. Yamada, K. Nakajima, T. Chikyow, T. Hasegawa, H. Koinuma, and M. Kawasaki, Anomalous Hall effect governed by electron doping in a room-temperature transparent ferromagnetic semiconductor. Nature Materials, 2004. 3(4): 221–224.
S.R. Shinde, S.B. Ogale, J.S. Higgins, H. Zheng, A.J. Millis, V.N. Kulkarni, R. Ramesh, R.L. Greene, and T. Venkatesan, Co-occurrence of superparamagnetism and anomalous Hall effect in highly reduced cobalt-doped rutile TiO 2 -delta films. Physical Review Letters, 2004. 92(16): 166601.
D.H. Kim, J.S. Yang, K.W. Lee, S.D. Bu, T.W. Noh, S.J. Oh, Y.W. Kim, J.S. Chung, H. Tanaka, H.Y. Lee, and T. Kawai, Formation of Co nanoclusters in epitaxial Ti0.96Co0.04O2 thin films and their ferromagnetism. Applied Physics Letters, 2002. 81(13): 2421–2423.
S.A. Chambers, Ferromagnetism in doped thin-film oxide and nitride semiconductors and dielectrics. Surface Science Reports, 2006. 61(8): 345–381.
H. Munekata, H. Ohno, S. Vonmolnar, A. Segmuller, L.L. Chang, and L. Esaki, Diluted magnetic III-V semiconductors. Physical Review Letters, 1989. 63(17): 1849–1852.
J. De Boeck, R. Oesterholt, A. Van Esch, H. Bender, C. Bruynseraede, C. Van Hoof, and G. Borghs, Nanometer-scale magnetic MnAs particles in GaAs grown by molecular beam epitaxy. Applied Physics Letters, 1996. 68(19): 2744–2746.
H. Ohno, A. Shen, F. Matsukura, A. Oiwa, A. Endo, S. Katsumoto, and Y. Iye, (Ga,Mn)As: A new diluted magnetic semiconductor based on GaAs. Applied Physics Letters, 1996. 69(3): 363–365.
D.D. Awschalom and M.E. Flatté, Challenges for semiconductor spintronics. Nature Physics, 2007. 3(3): 153–159.
A. Stroppa, S. Picozzi, A. Continenza, and A.J. Freeman, Electronic structure and ferromagnetism of Mn-doped group-IV semiconductors. Physical Review B, 2003. 68(15): 155203 .
H.M. Weng and J.M. Dong, First-principles investigation of transition-metal-doped group-IV semiconductors: R(x)Y1(-x) (R=Cr,Mn,Fe;Y=Si,Ge). Physical Review B, 2005. 71(3): 035201.
Y.D. Park, A. Wilson, A.T. Hanbicki, J.E. Mattson, T. Ambrose, G. Spanos, and B.T. Jonker, Magnetoresistance of Mn: Ge ferromagnetic nanoclusters in a diluted magnetic semiconductor matrix. Applied Physics Letters, 2001. 78(18): 2739–2741.
Y.D. Park, A.T. Hanbicki, S.C. Erwin, C.S. Hellberg, J.M. Sullivan, J.E. Mattson, T.F. Ambrose, A. Wilson, G. Spanos, and B.T. Jonker, A group-IV ferromagnetic semiconductor: MnxGe1-x. Science, 2002. 295(5555): 651–654.
L.F. Liu, N.F. Chen, C.L. Chen, Y.L. Li, Z.G. Yin, and F. Yang, Magnetic properties of Mn-implanted n-type Ge. Journal of Crystal Growth, 2004. 273(1–2): 106–110.
J.S. Kang, G. Kim, S.C. Wi, S.S. Lee, S. Choi, S. Cho, S.W. Han, K.H. Kim, H.J. Song, H.J. Shin, A. Sekiyama, S. Kasai, S. Suga, and B.I. Min, Spatial chemical inhomogeneity and local electronic structure of Mn-doped Ge ferromagnetic semiconductors. Physical Review Letters, 2005. 94(14): 147202.
A.P. Li, J.F. Wendelken, J. Shen, L.C. Feldman, J.R. Thompson, and H.H. Weitering, Magnetism in MnxGe1-x semiconductors mediated by impurity band carriers. Physical Review B, 2005. 72(19): 195205.
N. Pinto, L. Morresi, M. Ficcadenti, R. Murri, F. D’Orazio, F. Lucari, L. Boarino, and G. Amato, Magnetic and electronic transport percolation in epitaxial Ge1-xMnx films. Physical Review B, 2005. 72(16): 165203.
S. Ahlers, D. Bougeard, N. Sircar, G. Abstreiter, A. Trampert, M. Opel, and R. Gross, Magnetic and structural properties of GexMn1-x films: Precipitation of intermetallic nanomagnets. Physical Review B, 2006. 74(21): 214411.
M. Jamet, A. Barski, T. Devillers, V. Poydenot, R. Dujardin, P. Bayle-Guillemaud, J. Rothman, E. Bellet-Amalric, A. Marty, J. Cibert, R. Mattana, and S. Tatarenko, High-Curie-temperature ferromagnetism in self-organized Ge1-xMnx nanocolumns. Nature Materials, 2006. 5(8): 653–659.
L. Ottaviano, P. Parisse, M. Passacantando, S. Picozzi, A. Verna, G. Impellizzeri, and F. Priolo, Nanometer-scale spatial inhomogeneities of the chemical and electronic properties of an ion implanted Mn-Ge alloy. Surface Science, 2006. 600(20): 4723–4727.
M. Passacantando, L. Ottaviano, F. D’Orazio, F. Lucari, M. De Biase, G. Impellizzeri, and F. Priolo, Growth of ferromagnetic nanoparticles in a diluted magnetic semiconductor obtained by Mn+ implantation on Ge single crystals. Physical Review B, 2006. 73(19): 195207.
J.J. Chen, K.L. Wang, and K. Galatsis, Electrical field control magnetic phase transition in nanostructured MnxGe1-x. Applied Physics Letters, 2007. 90(1): 012501.
D. Bougeard, S. Ahlers, A. Trampert, N. Sircar, and G. Abstreiter, Clustering in a precipitate-free GeMn magnetic semiconductor. Physical Review Letters, 2006. 97(23): 237202.
H.L. Li, Y.H. Wu, Z.B. Guo, P. Luo, and S.J. Wang, Magnetic and electrical transport properties of Ge1-xMnx thin films. Journal of Applied Physics, 2006. 100(10): 103908.
A.P. Li, C. Zeng, K. van Benthem, M.F. Chisholm, J. Shen, S.V.S.N. Rao, S.K. Dixit, L.C. Feldman, A.G. Petukhov, M. Foygel, and H.H. Weitering, Dopant segregation and giant magnetoresistance in manganese-doped germanium. Physical Review B, 2007. 75(20).
N. Yamada, Atomic magnetic-moment and exchange interaction between Mn atoms in intermetallic compounds in Mn-Ge system. Journal of the Physical Society of Japan, 1990. 59(1): 273–288.
C.G. Zeng, S.C. Erwin, L.C. Feldman, A.P. Li, R. Jin, Y. Song, J.R. Thompson, and H.H. Weitering, Epitaxial ferromagnetic Mn5Ge3 on Ge(111). Applied Physics Letters, 2003. 83(24): 5002–5004.
A. Kaminski and S. Das Sarma, Polaron percolation in diluted magnetic semiconductors. Physical Review Letters, 2002. 88(24): 247202.
Acknowledgment
The authors thank for the financial support from the Defense Advanced Research Projects Agency (DARPA), the Office of Naval Research (ONR), the Defense Microelectronics Activity (DMEA), and the joint program of National Science Foundation and Nanoelectronics Research Initiative (NRI).
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Lu, J. et al. (2009). Spintronics and Novel Magnetic Materials for Advanced Spintronics. In: Liu, J., Fullerton, E., Gutfleisch, O., Sellmyer, D. (eds) Nanoscale Magnetic Materials and Applications. Springer, Boston, MA. https://doi.org/10.1007/978-0-387-85600-1_16
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