Abstract
Scanning tunneling microscopy (STM) experiments were performed to study growth modes induced by hyperthermal Ge ion action during molecular-beam epitaxy (MBE) of Ge on Si(100). Continuous and pulsed ion-beams were used. STM studies have shown that ion-beam action during heteroepitaxy leads to decrease in critical film thickness for transition from two-dimensional (2D) to three-dimensional (3D) growth modes, enhancement of 3D island density and narrowing of size distribution, as compared with conventional MBE experiments. The crystal perfection of Ge/Si structures with Ge islands embedded in Si was analyzed by the Rutherford backscattering/channeling technique (RBS) and transmission electron microscopy (TEM). The studies of Si/Ge/Si(100) structures indicated defect-free Ge dots and Si layers for the initial stage of heteroepitaxy (5 monolayers of Ge) in pulsed ion beam action growth mode at 350°C. Continuous ion-beam irradiation was found to induce dislocations around Ge dots. The results of kinetic Monte Carlo (KMC) simulations have shown that two mechanisms of ion-beam action can be responsible for stimulation of 2D-3D transition: (i) surface defect generation by ion impacts, and (ii) the enhancement of surface diffusion.
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Dvurechenskii, A.V. et al. (2005). Ge/Si Nanostructures with Quantum Dots Grown by Ion-Beam-Assisted Heteroepitaxy. In: Joyce, B.A., Kelires, P.C., Naumovets, A.G., Vvedensky, D.D. (eds) Quantum Dots: Fundamentals, Applications, and Frontiers. NATO Science Series, vol 190. Springer, Dordrecht. https://doi.org/10.1007/1-4020-3315-X_9
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DOI: https://doi.org/10.1007/1-4020-3315-X_9
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