Abstract—
The processes of reactive magnetron sputtering of Ti–Al composite targets with varying Al/Ti ratios were studied. Dependences of deposition rate, discharge voltage, elemental composition, and intensity of reference plasma emission lines were determined as functions of the oxygen concentration in the Ar–O2 gas mixture. It was demonstrated that, in reactive sputtering of Ti–Al composite targets, the discharge voltage is determined by the effective ion–electron emission coefficient (IEEC), which depends on the area occupied by the metals on the target, their oxidation states, and the IEEC of the metals and their oxides. The deposition rate of TixAl1 – xOy films both in the metallic and transitional sputtering modes increases proportionally to the fraction of Al in the target, and the relative concentration of the metals in the deposited films depends on the oxygen concentration in the Ar–O2 gas mixture and is determined by the reactivity of the constituent materials in the target. By optical emission spectroscopy (OES), it was shown that the ratio of the atomic concentrations of Al and Ti in the deposited TixAl1 – xOy films uniquely depends on the ratio of the intensities of the aluminum emission line (AlI) and the titanium emission line (TiI) in the plasma. This allows using OES for predicting the metal contents in the films in reactive magnetron sputtering of Ti–Al targets.
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REFERENCES
Hall, S., Buiu, O., Mitrovic, I.Z., Lu, Y., et al., Review and perspective of high-k dielectrics on silicon, J. Telecomunic. Inform. Technol., 2007, vol. 2, p. 33.
Robertson, J. and Wallace, R.M., High-K materials and metal gates for CMOS applications, Mater. Sci. Eng.: R: Reports, 2015, vol. 88, p. 1.
Robertson, J. and Falabretti, B., Band offsets of high K gate oxides on III–V semiconductors, J. Appl. Phys., 2006, vol. 100, p. 014111.
Ribes, G., Mitard, J., Denais, M., Bruyère, S., et al., Review on high-k dielectrics reliability issues, IEEE Trans. Device Materials Reliab., 2005, vol. 5, no. 1, p. 5.
Robertson, J., High dielectric constant oxides, Eur. Phys. J. Appl. Phys., 2004, vol. 28, p. 265.
Wilk, G.D., Wallace, R.M., and Anthony, J.M., High-k gate dielectrics: Current status and materials properties considerations, J. Appl. Phys., 2001, vol. 89, no. 10, p. 5243.
Wallace, R.M. and Wilk, G., High-k gate dielectric materials, MRS Bull., 2002, vol. 27, no. 3, p. 192.
Fröhlich, K., Ťapajna, M., Rosová, A., Dobročka, E., et al., Growth of high-dielectric-constant TiO2 films in capacitors with RuO2 electrodes, Electrochem. Solid-State Lett., 2008, vol. 11, no. 6, p. G19.
Avis, C. and Jang, J., High-performance solution processed oxide TFT with aluminum oxide gate dielectric fabricated by a sol-gel method, J. Mater. Chem., 2011, vol. 21, p. 10649.
Kim, Y.S. and Yun, S.J., Nanolaminated Al2O3–TiO2 thin films grown by atomic layer deposition, J. Cryst. Growth, 2005, vol. 274, p. 3.
Akshara, P.C., Rajaram, G., and Krishna, M.G., Single composite target magnetron sputter deposition of crystalline and amorphous SiC thin films, Mater. Res. Express, 2018, vol. 5, p. 036410.
Nakano, J., Miyazaki, H., Kimura, T., Goto, T., et al., Thermal conductivity of yttria-stabilized zirconia thin films prepared by magnetron sputtering, J. Ceram. Soc. Jpn., 2004, vol. 112, p. 908.
Ries, S., Bibinov, N., Rudolph, M., Schulze, J., et al., Spatially resolved characterization of a dc magnetron plasma using optical emission spectroscopy, Plasma Sources Sci. Technol., 2018, vol. 27, p. 094001.
Panjan, M., Loquai, S., Klemberg-Sapieha, J.E., and Martinu, L., Non-uniform plasma distribution in dc magnetron sputtering: Origin, shape and structuring of spokes, Plasma Sources Sci. Technol., 2015, vol. 24, p. 065010.
Britun, N. and Hnilica, J., Optical spectroscopy for sputtering process characterization, J. Appl. Phys., 2020, vol. 127, p. 211101.
Golosov, D.A., Melnikov, S.N., and Dostanko, A.P., Calculation of the elemental composition of thin films deposited by magnetron sputtering of mosaic targets, Surf. Eng. Appl. Electrochem., 2012, vol. 48, no. 1, p. 52.
Goncharov, A.A., Evsyukov, A.N., Kostin, E.G., Stetsenko, B.V., et al., Synthesis of nanocrystalline titanium dioxide films in a cylindrical magnetron-type gas discharge and their optical characterization, Tech. Phys., 2010, vol. 80, no. 8, p. 127.
Jokela, S.J., Veryovkin, I.V., Zinovev, A.V., Elam, J.W., et al., Secondary electron yield of emissive materials for large-area micro-channel plate detectors: Surface composition and film thickness dependencies, Physics Procedia, 2012, vol. 37, p. 740.
Chen, C.C., Phase equilibria at Ti-Al interface under low oxygen pressure, Atlas J. Mater. Sci., 2014, vol. 1, no. 1, p. 1.
Dean, J.A. and Lange, N.A., Lange’s Handbook of Chemistry, New York: McGraw-Hill Education, 2005.
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This work was supported by the Belarusian Republican Foundation for Fundamental Research and the Ministry of Science and Technology of the People’s Republic of China (joint scientific projects nos. T22KITG-023 (2022YFE0123400) and T22KITG-027 (2022YFE0122900)).
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Translated by M. Baznat
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Doan, H.T., Golosov, D.A., Zhang, J. et al. Application of Optical Emission Spectroscopy for Predicting the Composition of Films in Reactive Magnetron Sputtering of Ti–Al Composite Targets. Surf. Engin. Appl.Electrochem. 59, 682–689 (2023). https://doi.org/10.3103/S106837552305006X
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DOI: https://doi.org/10.3103/S106837552305006X