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Microstructural evolution at the interface of superconducting thin films and SiC substrate

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Abstract

Given the importance of fabricating superconducting thin-film device heterostructures, studying material interfaces as a function of processing conditions is warranted. In this work, we assess the interfacial reactions and resulting microstructural evolution at the NbN/SiC interface after thermal annealing. Transmission electron microscopy revealed the diffusion of NbN into the SiC substrate and the formation of NbN nanocrystallites therein induced by the 1400°C treatment. Raman spectroscopy is also employed to gain an understanding of the interface lattices’ optical responses.

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Data availability

Data presented herein are available from the corresponding author upon reasonable request.

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Acknowledgments

The authors thank D. B. Newell, S. Payagala, G. Fitzpatrick, A. L. Levy, and E. C. Benck for assistance with the internal NIST review process. Commercial equipment, instruments, and materials are identified in this paper in order to specify the experimental procedure adequately. Such identification is not intended to imply recommendation or endorsement by the National Institute of Standards and Technology or the United States government nor is it intended to imply that the materials or equipment identified are necessarily the best available for the purpose.

Funding

Work presented herein was performed, for a subset of the authors, as part of their official duties for the United States Government. Funding is hence appropriated by the United States Congress directly.

Author information

Authors and Affiliations

  1. National Institute of Standards and Technology, Gaithersburg, MD, 20899, USA

    Michael B. Katz, Chieh-I. Liu, Mattias Kruskopf, Heather M. Hill, Angela R. Hight Walker, Randolph E. Elmquist, Albert V. Davydov & Albert F. Rigosi

  2. Department of Chemistry and Biochemistry, University of Maryland, College Park, MD, 20742, USA

    Chieh-I. Liu

  3. Physikalisch-Technische Bundesanstalt, Bundesallee 100, 38116, Brunswick, Germany

    Mattias Kruskopf

Authors
  1. Michael B. Katz
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  2. Chieh-I. Liu
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  5. Angela R. Hight Walker
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Contributions

C-IL, REE, and MK prepared samples. MBK performed electron microscopy measurements and analysis. AVD performed x-ray diffraction and analysis. AFR, AHW, REE, and AVD assisted with the analyses, support, and general project oversight. The manuscript was written through contributions of all authors. All authors have given approval to the final version of the manuscript.

Corresponding author

Correspondence to Albert V. Davydov.

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The authors declare no conflict of interest.

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Katz, M.B., Liu, CI., Kruskopf, M. et al. Microstructural evolution at the interface of superconducting thin films and SiC substrate. MRS Communications 12, 1168–1173 (2022). https://doi.org/10.1557/s43579-022-00284-4

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  • DOI: https://doi.org/10.1557/s43579-022-00284-4

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