Abstract
Incorporation of Si ion implantation to GaN metal semiconductor field effect transistor (MESFET) processing has been demonstrated. The channel and source/drain regions formed using Si ion implantation into undoped GaN on sapphire substrate. In comparison with the conventional devices without ion implanted source/drain structures, the ion implanted devices showed excellent device performance. On-state resistance reduces from 210 Ω-mm to 105 Ω-mm. Saturation drain current and maximum transconductance increase from 36 mA/mm to 78 mA/mm and from 3.8 mS/mm to 10 mS/mm, respectively.
Similar content being viewed by others
References
Haijiang Yu, L. McCarthy, S. Rajan, S. Keller, S. Denbaars, J. Speck, and U. Mishra, “Ion Implanted AlGaN-GaN HEMTs With Nonalloyed Ohmic Contacts ”, IEEE Electron Device Letters, Vol. 26, No. 5, pp. 283–285 (2005).
Wen-Kai Wang, Po-Chen Lin, Ching-Huao Lin, Cheng-Kuo Lin, Yi-Jen Chan, Guan-Ting Chen, and Jen-Inn Chyi, “Performance Enhancement by Using the n+-GaN Cap Layer and Gate Recess Technology on the AlGaN-GaN HEMT Fabrication ”, IEEE Electron Device Letters, Vol. 26, No. 1, pp. 5–7 (2005).
Tomohiro Murata, Masahiro Hikitra, Yutaka Hirose, Yasuhiro Uemoto, Kaoru Inoue, Tsuyoshi Tanaka and Daisuke Ueda, “Source Resistance of AlGaN-GaN HFETs with Novel Superlattice Cap Layer ”, IEEE Transaction on Electron Devices, Vol. 52, No. 6, pp. 1042–1047 (2004).
J. C. Zolper, R. J. Shul, A. G. Baca, R. G. Wilson, S. J. Pearton, and R. A. Stall, “Ion-implanted GaN Junction Field Effect Transistor ”, Appl. Phys. Lett. Vol. 68(16), 15, pp. 2273–2275 (1996).
Syed S. Islam, A.F.M. Anwar, “Thermal and Trapping Effects in GaN-Based MESFETs ”, IEEE Lester Eastman Conference on 6–8, pp. 108–117 (2002).
C. Lee, W. Lu, E. Piner, and I. Adesida, “Recessed-Gate GaN MESFET using ICP-RIE for High Temperature Microwave Applications”, Conference Digest. 58th DRC19–21, pp. 41–42 (2000).
Author information
Authors and Affiliations
Corresponding author
Rights and permissions
About this article
Cite this article
Nomoto, K., Ito, N., Tajima, T. et al. Double-Ion-Implanted GaN MESFETs with Extremely Low Source/Drain Resistance. MRS Online Proceedings Library 892, 1306 (2005). https://doi.org/10.1557/PROC-0892-FF13-06
Published:
DOI: https://doi.org/10.1557/PROC-0892-FF13-06