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Study of Ga2O3 Deposition by MOVPE from Trimethylgallium and Oxygen in a Wide Temperature Range

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Abstract

Study of Ga2O3 deposition by MOVPE using trimethylgallium and oxygen was performed in a wide temperature range. It was found that for Ga2O3 deposition rate vs temperature dependence is very close to the TMGa pyrolysis in nitrogen. Kinetically-limited range for these processes corresponds to 550–700°C, that is 150°C higher, then for GaN deposition in the same reactor.

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Funding

This study was supported by the Russian Foundation for Basic Research (grant no. 19-52-80033 BRIKS_t) and the National Natural Science Foundation of China (grant no. 51961145110).

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Authors and Affiliations

  1. Ioffe Institute, St. Petersburg, Russia

    V. V. Lundin, S. N. Rodin & A. V. Sakharov

  2. Submicron Heterostructures for Microelectronics, Research and Engineering Center, Russian Academy of Sciences, St. Petersburg, Russia

    A. F. Tsatsulnikov

  3. Soft-Impact Ltd., Saint-Petersburg, Russia

    A. V. Lobanova, M. V. Bogdanov & R. A. Talalaev

  4. School of Microelectronics, University of Science and Technology of China, Hefei, Anhui, China

    Haiding Sun & Shibing Long

Authors
  1. V. V. Lundin
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  2. S. N. Rodin
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  3. A. V. Sakharov
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  4. A. F. Tsatsulnikov
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  5. A. V. Lobanova
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  6. M. V. Bogdanov
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  7. R. A. Talalaev
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  8. Haiding Sun
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  9. Shibing Long
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Correspondence to V. V. Lundin.

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Lundin, V.V., Rodin, S.N., Sakharov, A.V. et al. Study of Ga2O3 Deposition by MOVPE from Trimethylgallium and Oxygen in a Wide Temperature Range. Tech. Phys. Lett. 49 (Suppl 3), S211–S214 (2023). https://doi.org/10.1134/S1063785023900807

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  • DOI: https://doi.org/10.1134/S1063785023900807

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