Abstract
Chemical-mechanical polishing of sapphire with colloidal silicon dioxide has been studied with X-ray photoelectron spectroscopy. It has been found that aluminum silicate with the composition Al2SiO5 is formed on the polished crystal surface. The silicon-containing layer thickness reaches 20.5 nm. Its value decreases in the sequence of samples with (0001), ((10\(\bar 1\)2), and (11\(\bar 2\)0) and orientations. A mechanism by which Al2O3 reacts with SiO2 has been proposed. It has been revealed that sapphire samples with different crystallographic orientations exhibit an anisotropic rate of material removal. The anisotropy can be explained by a difference in the rate of the formation of intermediate products during chemical interaction between aluminum and silicon oxides on different planes.
Similar content being viewed by others
References
V. V. Rogov, N. D. Rublev, T. L. Krotenko, et al., Sverkhtverd. Mater., no. 4, 75 (2008).
H. W. Gutsche and J. W. Moody, J. Electrochem. Soc. 125, 136 (1978).
R. Schwartz and A. Brenner, Chem. Berichte 56, 1933 (1923).
B. Hader and O. Weis, Proc. SPIE 1015, 114 (1988).
Y. Namba and H. Tsuwa, Ann. CIRP 26, 325 (1977).
J. Werner and O. Weis, Wear 176, 239 (1994).
A. Ya. Danko, N. S. Sidel’nikova, and G. T. Adonkin, Poverkhnost’, no. 12, 50 (2004).
P. R. Anderson and W. E. Swarts, Inorg. Chem. 13, 2293 (1974).
T. L. Blair, J. Phys. Chem. 10, 760 (1990).
I. A. Semiokhin, B. V. Strakhov, and A. I. Osipov, Kinetics of Chemical Reactions (Mosc. Gos. Univ., Moscow, 1995) [in Russian].
A. Ya. Rozovskii, Heterogeneous Chemical Reactions (Nauka, Moscow, 1980).
R. Iler, Chemistry of Silica (Wiley, New York, 1979), vol. 1.
P. Yu. Butyagin and A. N. Streletskii, Phys. Solid State 47, 856 (2005).
Honglin Zhu, D. E. Niesz, and V. A. Greenhut, J. Mater. Res. 20, 504 (2005).
Author information
Authors and Affiliations
Additional information
Original Russian Text © E.A. Vovk, A.T. Budnikov, M.V. Dobrotvorskaya, S.I. Krivonogov, A.Ya. Dan’ko, 2012, published in Poverkhnost’. Rentgenovskie, Sinkhrotronnye i Neitronnye Issledovaniya, 2012, No. 2, pp. 21–27.
Rights and permissions
About this article
Cite this article
Vovk, E.A., Budnikov, A.T., Dobrotvorskaya, M.V. et al. Mechanism of the interaction between Al2O3 and SiO2 during the chemical-mechanical polishing of sapphire with silicon dioxide. J. Surf. Investig. 6, 115–121 (2012). https://doi.org/10.1134/S1027451012020188
Received:
Published:
Issue Date:
DOI: https://doi.org/10.1134/S1027451012020188