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A Study on the Process of Plasma-Enhanced Chemical Vapor Deposition of (AlxGa1 – x)2O3 Thin Films

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Abstract

A process for fabricating Al-doped β-Ga2O3 thin films of the (AlxGa1−x)2O3 composition by plasma-enhanced chemical vapor deposition has been studied for the first time. High-purity gallium metal, aluminum iodide (AlI3), and high-purity oxygen were used as precursors. Low-temperature plasma at a reduced pressure (0.01 torr) was the initiator of chemical transformations between the reactants. The plasma-enhanced deposition process was studied by optical emission spectroscopy in the range of 180–1100 nm. The obtained thin films of the (AlxGa1−x)2O3 system with the amount of the Al2O3 phase up to 20% were studied by various analytical methods.

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REFERENCES

  1. Ahmadi, E. and Oshima, Y., J. Appl. Phys., 2019, vol. 126, no. 16, p. 160901.

    Article  Google Scholar 

  2. Peelaers, H., Lyons, J.L., Varley, J.B., and van de Walle, C.G., APL Mater., 2019, vol. 7, no. 2, p. 022519.

    Article  Google Scholar 

  3. Oshima, T., Kato, Y., Kawano, N., Kuramata, A., Yamakoshi, S., Fujita, S., Oishi, T., and Kasu, M., APEX, 2017, vol. 10, no. 3, p. 035701.

    Article  Google Scholar 

  4. Zhang, Y., Neal, A., Xia, Z., Joishi, C., Johnson, J.M., Zheng, Y., Bajaj, S., Brenner, M., Dorsey, D., Chabak, K., Jessen, G., Hwang, J., Mou, S., Heremans, J.P., and Rajan, S., Appl. Phys. Lett., 2018, vol. 112, no. 17, p. 173502.

    Article  Google Scholar 

  5. Olivier, J. and Poirier, R., Surf. Sci., 1981, vol. 105, p. 347.

    Article  CAS  Google Scholar 

  6. Ishizawa, N., Miyata, T., Minato, I., Marumo, F., and Iwai, S., Acta Crystallogr., Sect B: Struct. Sci., 1980, vol. 36, p. 228.

    Article  Google Scholar 

  7. Hill, V.G., Roy, R., and Osborn, E.F., J. Am. Ceram. Soc., 1952, vol. 35, p. 135.

    Article  CAS  Google Scholar 

  8. Jaromin, A.L. and Edwards, D.D., J. Am. Ceram. Soc., 2005, vol. 88, p. 2573.

    Article  CAS  Google Scholar 

  9. Kaun, S.W., Wu, F., and Speck, J.S., J. Vac. Sci. Technol., A, 2015, vol. 33, p. 041508.

    Article  Google Scholar 

  10. Horie, R., Nishinaka, H., Tahara, D., and Yoshimoto, M., J. Alloys Compd., 2021, vol. 851, p. 156927.

    Article  CAS  Google Scholar 

  11. Lee, H., Liu, J., and Lee, C., IEEE Photon. Technol. Lett., 2018, vol. 30, p. 549.

    Article  CAS  Google Scholar 

  12. Wang, X., Chen, Z., Zhang, F., Saito, K., Tanaka, T., Nishio, M., and Guo, Q., AIP Adv., 2016, vol. 6, p. 015111.

    Article  Google Scholar 

  13. Zhang, F., Saito, K., Tanaka, T., Nishio, M., Arita, M., and Guo, Q., Appl. Phys. Lett., 2014, vol. 105, p. 162107.

    Article  Google Scholar 

  14. Anhar Uddin Bhuiyan, A.F.M., Feng, Z., Johnson, J.M., Huang, H.-L., Sarker, J., Zhu, M., Karim, M.R., Mazumder, B., Hwang, J., and Zhao, H., APL Mater., 2020, vol. 8, p. 031104.

    Article  CAS  Google Scholar 

  15. Mochalov, L.A., Logunov, A.A., and Kudryashov, M.A., J. Phys.: Conf. Ser., 2021, vol. 1967, no. 1, p. 012037.

    CAS  Google Scholar 

  16. Mochalov, L., Logunov, A., Gogova, D., Letnianchik, A., and Vorotyntsev, V., Opt. Quantum Electron., 2020, vol. 52, p. 510.

    Article  CAS  Google Scholar 

  17. Mochalov, L., Logunov, A., Kudryashov, M., Prokhorov, I., Sazanova, T., Yunin, P., Pryakhina, V., Vorotuntsev, I., Malyshev, V., Polyakov, A., and Pearton, S.J., J. Solid State Sci. Technol. 2021, vol. 10, p. 073002.

    Article  CAS  Google Scholar 

  18. Logunov, A., Mochalov, L., Gogova, D., and Vorotyntsev, V., 2019 21st International Conference on Transparent Optical Networks (ICTON), Angers, France, pp. 1−4, https://doi.org/10.1109/ICTON.2019.8840331

  19. Mochalov, L., Logunov, A., and Vorotyntsev, V., Sep. Purif. Technol., 2021, vol. 258, p. 118001.

    Article  CAS  Google Scholar 

  20. Mochalov, L., Logunov, A., Kitnis, A., Gogova, D., and Vorotyntsev, V., Sep. Purif. Technol., 2020, vol. 238, p. 116446.

    Article  CAS  Google Scholar 

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Funding

The study was supported by the Russian Science Foundation, project no. 22-13-00053 “Development of scientific foundations for the technology of obtaining chemoresistive materials for electronic nose systems based on complex nanostructured oxide matrices.”

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Authors and Affiliations

  1. Lobachevsky University of Nizhny Novgorod, 603950, Nizhny Novgorod, Russia

    L. A. Mochalov, M. A. Kudryashov, I. O. Prokhorov, M. A. Vshivtsev, Yu. P. Kudryashova & A. V. Knyazev

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  1. L. A. Mochalov
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  2. M. A. Kudryashov
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  3. I. O. Prokhorov
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  4. M. A. Vshivtsev
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  5. Yu. P. Kudryashova
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  6. A. V. Knyazev
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Correspondence to M. A. Vshivtsev.

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Translated by S. Zatonsky

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Mochalov, L.A., Kudryashov, M.A., Prokhorov, I.O. et al. A Study on the Process of Plasma-Enhanced Chemical Vapor Deposition of (AlxGa1 – x)2O3 Thin Films. High Energy Chem 57, 430–435 (2023). https://doi.org/10.1134/S0018143923050065

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