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Admittance Spectroscopy of Solar Cells Based on Selective Contact MoOx/Si Junction

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Abstract

The possibility of using admittance spectroscopy to characterize the quality of ITO/MoOx/n-Si structures is shown. It has been demonstrated that magnetron evaporation of ITO layer at room temperature leads to the formation of radiation defects in the near-surface region of Si near the MoOx/Si interface with a depth of 0.13 and 0.26 eV below the conduction band with a capture cross-section of (1–5) × 10–19 and (5–10) × 10–19 cm–2, respectively. An increase in the deposition temperature of the ITO layer to 130°C allows reducing the concentration below the sensitivity leading to a significant improvement of solar cells characteristics.

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Funding

The research presented in this paper was carried out within the framework of project No. 075-01024-21-00 of the state assignment of Ministry of Science and Higher Education of the Russian Federation.

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Authors and Affiliations

  1. Alferov St. Petersburg National Research Academic University, Russian Academy of Sciences, 194021, St. Petersburg, Russia

    A. I. Baranov, D. A. Kudryashov, A. V. Uvarov, I. A. Morozov, A. A. Maksimova, E. A. Vyacheslavova & A. S. Gudovskikh

  2. St. Petersburg State Electrotechnical University “LETI”, 193376, St. Petersburg, Russia

    A. I. Baranov, D. A. Kudryashov, A. V. Uvarov, I. A. Morozov, A. A. Maksimova, E. A. Vyacheslavova & A. S. Gudovskikh

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  1. A. I. Baranov
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  2. D. A. Kudryashov
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  3. A. V. Uvarov
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  4. I. A. Morozov
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  5. A. A. Maksimova
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  6. E. A. Vyacheslavova
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  7. A. S. Gudovskikh
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Correspondence to A. I. Baranov.

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Baranov, A.I., Kudryashov, D.A., Uvarov, A.V. et al. Admittance Spectroscopy of Solar Cells Based on Selective Contact MoOx/Si Junction. Tech. Phys. Lett. 47, 785–788 (2021). https://doi.org/10.1134/S1063785021080162

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  • DOI: https://doi.org/10.1134/S1063785021080162

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