Abstract
It has been shown that the doping of the front side of a solar cell with a deep-level p–n junction with nickel atoms increases short-circuit current density Jsc by 89% and open-circuit voltage Voc by 19.7%. Additional thermal treatment at 700°C for 1 h increases Jsc by 98.4% and Voc by 13.18%. It is presumed that the IR radiation conversion efficiency grows because nickel atoms form clusters, these being getter centers for uncontrolled recombinant impurities.
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Funding
This work was performed within the framework of project no. OT-F2-50 “Development of Scientific Foundations for the Formation of AIIBVI and AIIIBV Unit Cells in a Silicon Lattice—a New Approach in the Synthesis of Promising Materials for Photoenergetics and Photonics.”
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Translated by E. Glushachenkova
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Bakhadyrkhanov, M.K., Isamov, S.B., Kenzhaev, Z.T. et al. Studying the Effect of Doping with Nickel on Silicon-Based Solar Cells with a Deep p–n-Junction. Tech. Phys. Lett. 45, 959–962 (2019). https://doi.org/10.1134/S1063785019100031
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DOI: https://doi.org/10.1134/S1063785019100031