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Ku and Ka-band Gallium Nitride Monolithic Integrated Circuits on Silicon Substrates

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Abstract

For the first time in Russia, the Mokerov Institute of Ultra High Frequency Semiconductor Electronics, Russian Academy of Sciences (IUHFSE, RAS) developed, manufactured, and investigated three types of monolithic integrated circuits for the Ku and Ka-bands based on gallium nitride heterostructures on silicon substrates with a diameter of 100 mm. The measured microwave characteristics of the obtained microcircuits are presented.

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REFERENCES

  1. Deo, N., High performance transmitters for small satellites for data transmission and remote sensing, in Proceedings of the 2019 IEEE Aerospace Conference, Big Sky, MT, USA, 2019, pp. 1–6.

  2. Medjdoub, F. and Iniewski, K., Gallium Nitride (GaN) Physics, Devices and Technology, Boca Raton, FL: CRC, 2016, p. 372.

    Google Scholar 

  3. Kishchinskii, A.A., Solid-state microwave amplifiers based on gallium nitride—state and development prospects, in Materialy XIX Krymskoi konferentsii SVCh tekhnika i telekommunikatsionnye tekhnologii (Proceedings of the 19th Crimean Conference “Microwave Engineering and Telecommunication Technologies”), Sevastopol: Veber, 2009.

  4. Fedorov, Yu.V., Bugaev, A.S., and Pavlov, A.Yu., The manufacturing technology and development of monolithic integrated circuits based on gallium nitride, Nano- Mikrosist. Tekh., 2017, vol. 19, no. 5, pp. 273–293.

    Google Scholar 

  5. Fedorov, Yu.V. and Matveenko, O.S., IC topology: Voltage controlled generator for the frequency range 32–36 GHz, State Registration Certificate, 2017, no. 2017630088.

  6. Fedorov, Yu.V., IC topology: low noise amplifier for 32–36 GHz frequency range, State Registration Certificate, 2017, no. 2017630019.

  7. Fedorov, Yu.V., IC topology: dual balanced mixer for 32–36 GHz frequency range, State Registration Certificate, 2017, no. 2017630085.

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Authors and Affiliations

  1. Federal State Autonomous Scientific Institution, Mokerov Institute of Ultra High Frequency Semiconductor Electronics (IUHFSE), Russian Academy of Sciences, 117105, Moscow, Russia

    Yu. V. Fedorov, A. S. Bugaev, S. A. Gamkrelidze, D. L. Gnatyuk, O. S. Matveenko, A. Yu. Pavlov, R. R. Galiev, A. V. Zuev, M. V. Maitama, N. V. Shavruk & K. N. Tomosh

Authors
  1. Yu. V. Fedorov
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  2. A. S. Bugaev
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  3. S. A. Gamkrelidze
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  4. D. L. Gnatyuk
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  5. O. S. Matveenko
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  6. A. Yu. Pavlov
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  7. R. R. Galiev
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  8. A. V. Zuev
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  9. M. V. Maitama
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  10. N. V. Shavruk
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  11. K. N. Tomosh
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Corresponding authors

Correspondence to Yu. V. Fedorov or D. L. Gnatyuk.

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Fedorov, Y.V., Bugaev, A.S., Gamkrelidze, S.A. et al. Ku and Ka-band Gallium Nitride Monolithic Integrated Circuits on Silicon Substrates. Russ Microelectron 50, 155–160 (2021). https://doi.org/10.1134/S1063739721030045

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  • DOI: https://doi.org/10.1134/S1063739721030045

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